Direct optical reading of resistive switching in a TiO2 film

被引：3
|
作者：
Irzhak, D. [1 ]
Fahrtdinov, R. [1 ]
Sergeev, A. [2 ]
机构：
[1] Russian Acad Sci, Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Moscow District, Russia
[2] Russian Acad Sci, Sci Res Inst Syst Anal, Fed State Inst, Nakhimovskiy Pr,36-1, Moscow 117218, Russia
来源：
OPTICAL MATERIALS | 2020年 / 109卷
基金：
俄罗斯基础研究基金会;
关键词：
TiO2; film; Resistive switching; Reflection coefficient; Diffraction grating; THIN-FILMS;
D O I：
10.1016/j.optmat.2020.110361
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report direct optical reading of resistive switching in an amorphous TiO2 film. Changing TiO2 film conductivity under an applied electric field causes a change in the film reflection coefficient. To find this phenomenon, a sample with Al electrodes deposited on an amorphous TiO2 film in the form of an interdigital transducer was used. The experimental characteristic of a device shows a hysteresis of the reflection coefficient repeating the change in resistance under an applied electric field.
引用
收藏
页数：7
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