On positrons irradiation in the defects of vacancy type

被引:1
|
作者
Kupchishin, Al [1 ,2 ]
机构
[1] Abay Kazakh Natl Pedag Univ, 13 Dostyk Ave, Alma Ata, Kazakhstan
[2] Al Farabi Kazakh Natl Univ, 71 Al Farabi Ave, Alma Ata, Kazakhstan
关键词
D O I
10.1088/1757-899X/168/1/012094
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
It was predicted the radiation of low energy positrons at their interaction with the defects of the vacancy type. Models of positron traps have been proposed. The energy transitions of positrons in the defects were calculated.
引用
收藏
页数:4
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