Intervalence band absorption loss coefficients of the active layer for InP-based long wavelength laser diodes

被引：6

作者：

Kakimoto, S ^{[1
]}

Watanabe, H ^{[1
]}

机构：

[1] Mitsubishi Elect Corp, Optoelect Devices Dev Dept, Itami, Hyogo 6648641, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 87卷 / 05期

关键词：

D O I：

10.1063/1.372144

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have calculated the intervalence band absorption loss coefficients of the active layer for InP-based long wavelength laser diodes lasing in the range of 1.2-1.55 mu m. The calculated results show that, as the wavelength of laser diode becomes longer, the loss coefficient of the laser diode rapidly increases toward 1.55 mu m, which coincides with the experimental data reported. We also describe the dependence of the loss coefficient on temperature. (C) 2000 American Institute of Physics. [S0021-8979(00)05405-0].

引用

页码：2095 / 2097

页数：3

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