Hall measurements of inversion and accumulation-mode 4H-SiC MOSFETs

被引：2
|
作者：
Chatty, K [1 ]
Banerjee, S
Chow, TP
Gutmann, RJ
Arnold, E
Alok, D
机构：
[1] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12181 USA
[2] Philips Res, Briarcliff Manor, NY USA
来源：
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS | 2002年 / 389-3卷
关键词：
accumulation; Hall; interface traps; inversion;
D O I：
10.4028/www.scientific.net/MSF.389-393.1041
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Inversion and accumulation-layer electron mobility in n-channel 4H-SiC MOSFETs have been investigated using Hall measurements. In the inversion-mode MOSFETs, Hall mobilities of similar to 70-80 cm(2)/V-s were obtained compared to a field-effect mobility (mu(FE)) of similar to 5 cm(2)/V-s. Accumulation-layer electron mobilities (mu(acc)) of similar to 350 cm(2)/V-s and 200 cm(2)/V-s were extracted on samples with different channel doping concentrations. In contrast, the field-effect mobility under accumulation was similar to 2-3 cm(2)/V-s.
引用
收藏
页码：1041 / 1044
页数：4
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