Electronic and Optical Properties of NiSi2/Si Nanofilms

被引：3
|
作者：
Umirzakov, B. E. [1 ]
Tashmukhamedova, D. A. [1 ]
Tashatov, A. K. [1 ]
Mustafoeva, N. M. [1 ]
机构：
[1] Tashkent State Tech Univ, Tashkent 100095, Uzbekistan
来源：
TECHNICAL PHYSICS | 2019年 / 64卷 / 05期
关键词：
ULTRATHIN COSI2 LAYERS; ION-IMPLANTATION; FILMS; SPECTROSCOPY; SURFACE; SI;
D O I：
10.1134/S1063784219050244
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Optimum conditions for ion implantation and subsequent annealing for the fabrication of NiSi2/Si (111) nanofilms with a thickness of 3.0-6.0 nm are determined. It is demonstrated that the energy-band parameters and optical properties typical of thick NiSi2 films start to set in at d = 5.0-6.0 nm.
引用
收藏
页码：708 / 710
页数：3
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