Photoluminescent properties of copper-doped zinc oxide nanowires

被引:229
|
作者
Xu, CX
Sun, XW
Zhang, XH
Ke, L
Chua, SJ
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Inst Mat Res & Engn, Singapore 117602, Singapore
关键词
D O I
10.1088/0957-4484/15/7/026
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Copper-doped zinc oxide nanowires were fabricated on copper-coated silicon substrate by sintering a mixture of zinc oxide and graphite powders at high temperature. Copper functioned as a catalyst in the zinc oxide nanowire growth and was incorporated during the growth as a dopant. The size of copper-doped zinc oxide nanowires ranges from 30 to 100 nm in diameter and tens to hundreds of microns in length. The photoluminescent excitation spectra showed multiple absorption peaks in the ultraviolet and blue/green region. Correspondingly, broad and continuous photoluminescence spectra were observed extending from the ultraviolet to the red region with shoulder peaks at room temperature, which is different from that of the bulk. The x-ray photoelectron spectroscopy and low temperature photoluminescence were employed to analyse the luminescent mechanism.
引用
收藏
页码:856 / 861
页数:6
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