Influence of hole transport material/metal contact interface on perovskite solar cells

被引:16
|
作者
Lei, Lei [1 ,3 ]
Zhang, Shude [4 ]
Yang, Songwang [1 ]
Li, Xiaomin [2 ]
Yu, Yu [1 ,3 ]
Wei, Qingzhu [4 ]
Ni, Zhichun [4 ]
Li, Ming [3 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Mat Energy Convers, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China
[3] Univ Nottingham, Dept Mech Mat & Mfg Engn, Univ Pk, Nottingham, England
[4] Suzhou Talesun Solar Technol Co Ltd, 1 Talesun Rd, Changshu 215542, Jiangsu, Peoples R China
基金
中国国家自然科学基金; 国家高技术研究发展计划(863计划);
关键词
hole transport materials; silver contact; aging; perovskite solar cells; LEAD IODIDE PEROVSKITE; HIGH-EFFICIENCY; ROOM-TEMPERATURE; SPIRO-OMETAD; ELECTRON; DEPOSITION; LAYERS; FILMS; DENSITY; LENGTHS;
D O I
10.1088/1361-6528/aab795
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Interfaces have a significant impact on the performance of perovskite solar cells. This work investigated the influence of hole transport material/metal contact interface on photovoltaic behaviours of perovskite solar devices. Different hole material/metal contact interfaces were obtained by depositing the metal under different conditions. High incident kinetic energy metal particles were proved to penetrate and embed into the hole transport material. These isolated metal particles in hole transport materials capture holes and increase the apparent carrier transport resistance of the hole transport layer. Sample temperature was found to be of great significance in metal deposition. Since metal vapour has a high temperature, the deposition process accumulated a large amount of heat. The heat evaporated the additives in the hole transport layer and decreased the hole conductivity. On the other hand, high temperature may cause iodization of the metal contact.
引用
收藏
页数:13
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