Advanced GaN HEMT Modeling Techniques and Power Amplifiers for Millimeter-Wave Applications

被引:0
|
作者
Shinjo, Shintaro [1 ]
Hangai, Masatake [1 ]
Yamaguchi, Yutaro [1 ]
Miyazaki, Moriyasu [1 ]
机构
[1] Mitsubishi Electr Corp, Tokyo, Japan
关键词
GaN; power amplifier; MMIC; Millimeter-wave; Satellite communication; 5G;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Satellite communications become more interesting because of an increasing number of satellite launches for especially Ku-band very small aperture terminals (VSAT). Recently, the systems push the frequency specifications towards millimeter-wave such as Ka-band. Also, the fifth generation mobile communications (5G) are expected to accommodate the forthcoming huge traffic demands with using millimeter-wave as well as sub-6GHz. Here, PAs have been always the working horse for RF frontend in any radio transmitters. In particular, advanced GaN PAs occupy the attentions with evolving to deal with ever-increasing system level requirements. This paper presents the prototyped results of state-of the art GaN PAs for millimeter-wave applications and novel modelling techniques for their designs.
引用
收藏
页码:566 / 569
页数:4
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