Electronic structures of the oxygenated diamond (100) surfaces

被引:9
|
作者
Liu Fengbin
Wang Jiadao
Liu Bing
Li Xuemin
Chen Darong [1 ]
机构
[1] Tsinghua Univ, State Key Lab Tribol, Beijing 100084, Peoples R China
[2] Tsinghua Univ, Inst Nucl & New Energy Technol, Beijing 100084, Peoples R China
来源
CHINESE SCIENCE BULLETIN | 2006年 / 51卷 / 20期
基金
中国国家自然科学基金;
关键词
first principles; oxygenation; diamond (100) surface; electronic structure;
D O I
10.1007/s11434-006-2139-4
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
By means of first principles method on the basis of density functional theory (DFT), the equilibrium geometries and density of states (DOS) of the two oxygenated diamond (100) surfaces, bridging model and on-top model are calculated. The results indicate that there are no surface states located in the band gap of the bridging model of oxygenated diamond (100) surface, and the occupied surface states in the valence band are attributed to the non-bonded O 2p orbital, O 2p and C 2p bonding orbitals, and C 2p and H ls bonding orbitals. By contrast, for the on-top model of oxygenated diamond (100) surface, the unoccupied surface states exist in the band gap, which originate from non-bonded C 2p and O 2p orbitals. In addition, the occupied surface states in the valence band are induced by non-bonded O 2p orbital and the C=O pi bond.
引用
收藏
页码:2437 / 2443
页数:7
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