The Dependencies of X-Ray Conductivity and X-Ray Luminescence of ZnSe Crystals on the Excitation Intensity

被引：7
|
作者：
Degoda, V. Ya [1 ]
Alizadeh, M. [1 ]
Kovalenko, N. O. [2 ]
Pavlova, N. Yu [3 ]
机构：
[1] Taras Shevchenko Natl Univ Kyiv, 64 Volodymyrska St, UA-01601 Kiev, Ukraine
[2] NAS Ukraine, Inst Single Crystals, 61001 Nauki Ave, Kharkov, Ukraine
[3] Natl Pedag Dragomanov Univ, 9 Pyrogova St, UA-01601 Kiev, Ukraine
来源：
ADVANCES IN CONDENSED MATTER PHYSICS | 2018年 / 2018卷
关键词：
SCINTILLATION; COPPER;
D O I：
10.1155/2018/1515978
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
This work studies the conductivity and luminescence of ZnSe single crystals under X-ray irradiation. The experimentally derived lux-ampere characteristics of the X-ray conductivity for ZnSe crystals have a sublinear behavior within the temperature range from 8 to 420 K. The theoretical analysis of the conductivity kinetics at X-ray excitation showed that the value of maximum accumulated lightsum at deep traps does not depend on radiation intensity. However, regarding shallow and phosphorescent traps, the strength of accumulated lightsum depends on the intensity of exciting irradiation. Specifically, these shallow traps and phosphorescent traps cause the sublinear behavior of lux-ampere characteristics in the semiconductor material.
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页数：8
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