Enhanced diamond nucleation on pretreated silicon substrates

被引：6
|
作者：
Shen, MR [1 ]
Wang, H [1 ]
Ning, ZY [1 ]
Ye, C [1 ]
Gan, ZQ [1 ]
Ren, ZX [1 ]
机构：
[1] ACAD SINICA,INST PLASMA PHYS,HEFEI 230031,PEOPLES R CHINA
来源：
THIN SOLID FILMS | 1997年 / 301卷 / 1-2期
关键词：
carbon; chemical vapour deposition (CVD); diamond; nucleation;
D O I：
10.1016/S0040-6090(96)09594-6
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The nucleation and growth of diamond on two-step pretreated Si substrates were studied. The diamond films were produced by hot-filament chemical vapor deposition. The two-step pretreatment comprised coating the smooth Si substrate with a thin carbon film by electrolysis of methanol solution, followed by 1 min ultrasonic treatment with diamond powder. An enhanced diamond nucleation density as high as 2 X 10(9) cm(-2) was obtained, three orders of magnitude higher than that on single-step pretreated Si substrates. In addition, rapid diamond nucleation on the pretreated Si substrate was observed. Explanations are given for the experimental results and a scheme of the kinetic process of nucleation is proposed.
引用
收藏
页码：77 / 81
页数：5
相关论文
共 50 条
  • [1] Enhanced nucleation of diamond films on pretreated substrates
    Buck, V
    Deuerler, F
    [J]. DIAMOND AND RELATED MATERIALS, 1998, 7 (10) : 1544 - 1552
  • [2] DIAMOND NUCLEATION ON PRETREATED SUBSTRATES
    KOBAYASHI, K
    MUTSUKURA, N
    MACHI, Y
    NAKANO, T
    [J]. DIAMOND AND RELATED MATERIALS, 1993, 2 (2-4) : 278 - 284
  • [3] Influence of silicon carbide interlayer evolution on diamond heteroepitaxy during bias enhanced nucleation on silicon substrates
    Sarrieu, Cyril
    Bauer-Grosse, Elizabeth
    Barrat, Silvere
    [J]. DIAMOND AND RELATED MATERIALS, 2011, 20 (08) : 1246 - 1249
  • [4] Investigation of bias enhanced nucleation of diamond on silicon
    Gerber, J
    Sattel, S
    Ehrhardt, H
    Robertson, J
    Wurzinger, P
    Pongratz, P
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (08) : 4388 - 4396
  • [5] Role of surface features in CVD diamond nucleation on surface-pretreated substrates
    Karve, P
    Sainkar, SR
    Kshirsagar, ST
    [J]. MATERIALS LETTERS, 1998, 34 (3-6) : 387 - 391
  • [6] Influence of Reaction Pressure on Nucleation Rate of Diamond on Silicon Substrates
    舒兴胜
    邬钦崇
    梁荣庆
    [J]. Plasma Science and Technology, 2000, (05) : 475 - 479
  • [7] AN XPS STUDY OF DIAMOND FILMS GROWN ON DIFFERENTLY PRETREATED SILICON SUBSTRATES
    AREZZO, F
    SEVERINI, E
    ZACCHETTI, N
    [J]. SURFACE AND INTERFACE ANALYSIS, 1994, 22 (1-12) : 218 - 223
  • [8] Bias-enhanced nucleation of diamond on silicon dioxide
    Irwin, MD
    Pantano, CG
    Gluche, P
    Kohn, E
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (05) : 716 - 718
  • [9] A PRETREATMENT PROCESS FOR ENHANCED DIAMOND NUCLEATION ON SMOOTH SILICON SUBSTRATES COATED WITH HARD CARBON-FILMS
    FENG, Z
    KOMVOPOULOS, K
    BROWN, IG
    BOGY, DB
    [J]. JOURNAL OF MATERIALS RESEARCH, 1994, 9 (08) : 2148 - 2153
  • [10] Bias enhanced nucleation and growth of diamond films on titanium substrates
    Fehling, R
    Schreck, M
    Bergmaier, A
    Dollinger, G
    Stritzker, B
    [J]. TRENDS AND NEW APPLICATIONS OF THIN FILMS, 1998, 287-2 : 315 - 318
12345