Three-Dimensional Two-Temperature Modeling of Ar Loop-Type Inductively Coupled Thermal Plasma for Surface Modification

被引:4
|
作者
Ozeki, Genki [1 ]
Tanaka, Yasunori [1 ]
Sugiyama, Y. [1 ]
Nakano, Y. [1 ]
Ishijima, T. [1 ]
Uesugi, Y. [1 ]
Yukimoto, T. [2 ]
Kawaura, H. [2 ]
机构
[1] Kanazawa Univ, Div Elect & Comp Sci, Kanazawa, Ishikawa 9201192, Japan
[2] CV Res Corp, Futamata 5-3-1, Ichikawa 2720001, Japan
关键词
Inductively coupled thermal plasma; Loop diameter; Loop-type; Numerical model; Surface modification; FULLERENE SYNTHESIS; OXIDATION;
D O I
10.1007/s11090-020-10144-5
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
In this paper, numerical calculations were made for Ar loop-type inductively coupled thermal plasma (loop-ICTP). The loop-ICTP was developed originally by the authors' group for rapid surface modification of large areas. Loop-ICTP is sustained with a unique three-dimensional (3D) configuration inside a circular loop quartz tube and on the substrate. A 3D and two-temperature thermofluid thermal plasma model was adopted for this calculation. Mass, momentum, and energy conservation equations were solved using a Maxwell equation for vector potential, an electron energy transport equation, and Saha's equation in the 3D space. Results indicate that Ar loop-ICTP can be sustained and formed in the loop tube and also on the substrate. Moreover, the heavy particle temperatures reaches 1800-2000 K, whereas the electron temperature is about 10,000 K. Loop size effects on the gas temperature and gas flow field were also investigated using the developed model. Results show that adoption of a larger loop tube can be expected to improve the plasma uniformity on the substrate when applied to rapid surface modification.
引用
收藏
页码:85 / 108
页数:24
相关论文
共 50 条
  • [1] Three-Dimensional Two-Temperature Modeling of Ar Loop-Type Inductively Coupled Thermal Plasma for Surface Modification
    Genki Ozeki
    Yasunori Tanaka
    Y Sugiyama
    Y Nakano
    T Ishijima
    Y Uesugi
    T Yukimoto
    H Kawaura
    Plasma Chemistry and Plasma Processing, 2021, 41 : 85 - 108
  • [2] Three-dimensional modeling of inductively coupled plasma torches
    Bernardi, D
    Colombo, V
    Ghedini, E
    Mentrelli, A
    PURE AND APPLIED CHEMISTRY, 2005, 77 (02) : 359 - 372
  • [3] Three-dimensional modeling and schlieren visualization of pure Ar plasma flow in inductively coupled plasma torches
    Nagulin, Konstantin Yu.
    Akhmetshin, Damir Sh.
    Gilmutdinov, Albert Kh.
    Ibragimov, Rinat A.
    JOURNAL OF ANALYTICAL ATOMIC SPECTROMETRY, 2015, 30 (02) : 360 - 367
  • [4] Three-dimensional modeling of an inductively coupled plasma torch for spectroscopic analysis
    Colombo, Vittorio
    Ghedini, Emanuele
    Mostaghimi, Javad
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 2008, 36 (04) : 1040 - 1041
  • [5] Global model of inductively coupled Ar plasmas using two-temperature approximation
    Kimura, T
    Ohe, K
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (08) : 4240 - 4246
  • [6] Three-dimensional simulation of an inductively coupled plasma reactor
    Panagopoulos, T
    Kim, D
    Midha, V
    Economou, DJ
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (05) : 2687 - 2696
  • [7] Three-dimensional modelling of inductively coupled plasma torches
    Bernardi, D
    Colombo, V
    Ghedini, E
    Mentrelli, A
    EUROPEAN PHYSICAL JOURNAL D, 2003, 22 (01): : 119 - 125
  • [8] Three-dimensional modelling of inductively coupled plasma torches
    D. Bernardi
    V. Colombo
    E. Ghedini
    A. Mentrelli
    The European Physical Journal D - Atomic, Molecular, Optical and Plasma Physics, 2003, 22 : 119 - 125
  • [9] Modeling three-dimensional magneto-hydrodynamic phenomena in inductively coupled plasma discharges
    Kumar, Sanjeev
    Munafo, Alessandro
    Stephani, Kelly
    Bodony, Daniel J.
    Panesi, Marco
    AIAA SCITECH 2024 FORUM, 2024,
  • [10] Wafer heating mechanisms in a molecular gas, inductively coupled plasma:: in situ, real time wafer surface measurements and three-dimensional thermal modeling
    Titus, M. J.
    Graves, D. B.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2008, 26 (05): : 1154 - 1160