RLC Matched GaN HEMT Power Amplifier with 2 GHz Bandwidth

We have demonstrated a RLC matched GaN HEMT power amplifier with 12dB gain, 0.05-2.0 GHz bandwidth, 8W CW output power and 36.7-65.4% drain efficiency over the band. The amplifier is packaged in a ceramic SO8 package and contains a GaN on SiC device operating at 28V drain voltage, alongside GaAs integrated passive matching circuitry. A second circuit designed for 48V operation and 15W CW power over the same band, obtains over 20W under pulsed condition with 10% duty cycle and 100 mu s pulse width. CW measurements are pending after assembly in an alternate high power package. These amplifiers are suitable for use in wideband digital cellular infrastructure, handheld radios, and jamming applications.