Temperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas in Silicon Carbide

被引：2
|
作者：
Deki, Manato [1 ]
Oka, Tomoki [1 ]
Takayoshi, Shodai [1 ]
Naoi, Yoshiki [1 ]
Makino, Takahiro
Ohshima, Takeshi
Tomita, Takuro [1 ]
机构：
[1] Univ Tokushima, 2-1 Minamijosanjinna, Tokushima 770, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷
关键词：
femtosecond laser modification; electrical conductivity; temperature dependence; exponential increase;
D O I：
10.4028/www.scientific.net/MSF.778-780.661
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Temperature dependence of the femtosecond laser modified region on silicon carbide was measured. The current-voltage characteristics showed the ohmic properties and thus we could evaluate the specific resistance for each irradiation condition and the measured temperatures. The specific resistance was increased with decreasing temperature. From the double exponential fit to the temperature dependence of the specific resistance, the trapping energy of the impurity levels formed by the femtosecond laser modification was found to be 4.5 meV and 51.4 meV.
引用
收藏
页码：661 / +
页数：2
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