Control of Polar Orientation and Lattice Strain in Epitaxial BaTiO3 Films on Silicon

被引：24

作者：

Lyu, Jike ^{[1
]}

Estandia, Saul ^{[1
]}

Gazquez, Jaume ^{[1
]}

Chisholm, Matthew F. ^{[2
]}

Fina, Ignasi ^{[1
]}

Dix, Nico ^{[1
]}

Fontcuberta, Josep ^{[1
]}

Sanchez, Florencio ^{[1
]}

机构：

[1] CSIC, Inst Ciencia Mat Barcelona ICMAB, Campus UAB, Barcelona 08193, Spain

[2] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA

来源：

ACS APPLIED MATERIALS & INTERFACES | 2018年 / 10卷 / 30期

关键词：

ferroelectric oxides; epitaxial oxides on silicon; strain engineering; barium titanate; pulsed laser deposition; dipole maps; MOLECULAR-BEAM EPITAXY; THIN-FILMS; OXYGEN-PRESSURE; LASER-ABLATION; OXIDES; ENHANCEMENT; TEMPERATURE; EXPANSION; DEFECTS;

D O I：

10.1021/acsami.8b07778

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Conventional strain engineering of epitaxial ferroelectric oxide thin films is based on the selection of substrates with a suitable lattice parameter. Here, we show that the variation of oxygen pressure during pulsed laser deposition is a flexible strain engineering method for epitaxial ferroelectric BaTiO3 films either on perovskite substrates or on Si(001) wafers. This unconventional growth strategy permits continuous tuning of strain up to high levels (epsilon > 0.8%) in films greater than one hundred nanometers thick, as well as selecting the polar axis orientation to be either parallel or perpendicular to the substrate surface plane.

引用

页码：25529 / 25535

页数：7

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