Interaction-induced edge states in HgTe/CdTe quantum wells under a magnetic field

被引：10
|
作者：
Chen, Zewei [1 ]
Ng, Tai Kai [1 ]
机构：
[1] Hong Kong Univ Sci & Technol, Phys Dept, Hong Kong, Peoples R China
来源：
PHYSICAL REVIEW B | 2019年 / 99卷 / 23期
关键词：
D O I：
10.1103/PhysRevB.99.235157
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, we study doped HgTe/CdTe quantum wells with Hubbard-type interaction under a perpendicular magnetic field using a lattice Bernevig-Hughes-Zhang (BHZ) model with a bulk inversion asymmetry (BIA) term. We show that the BIA term is strongly enhanced by interaction around the region when the band inversion of the topological insulator is destroyed by a magnetic field. The enhanced BIA term creates edge-like electronic states which can explain the experimentally discovered edge conductance in doped HgTe/CdTe quantum wells in a similar magnetic field regime.
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页数：7
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