In situ capped GaN-based metal-insulator-semiconductor heterostructure field-effect transistor

被引：0

作者：

Chang, Ping-Chuan ^{[1
]}

Lee, Kai-Hsuan ^{[2
]}

机构：

[1] Kun Shan Univ, Dept Electroopt Engn, Tainan, Taiwan

[2] Natl Synchrotron Radiat Res Ctr, Hsinchu, Taiwan

来源：

2013 IEEE 10TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND DRIVE SYSTEMS (IEEE PEDS 2013) | 2013年

关键词：

LEAKAGE CURRENTS; CURRENT COLLAPSE; ALGAN/GAN;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In situ grown AlGaN/GaN heterostructure field-effect transistor (HFET) capped by unactivated Mg-doped GaN was demonstrated. With 1-mu m-long gate length at drain-voltage of 10V, the presented HFET exhibited a drain-source current in saturation (I-DSS) of 735 mA/mm and a peak transconductance (g(m(max))) of 170 mS/mm, while the current gain cut-off frequency (f(T)) and maximum frequency of oscillation (f(max)) were 20.5 and 33.3 GHz, respectively. In addition, our HFET delivers 3.3 W/mm output power density with 10.3 dB power gain and 53% power-added efficiency. It is of great potential to high frequency and high power electronics applications.

引用

页码：974 / 976

页数：3

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