Influence of deposition temperature on the structural and optical properties of InSbSe3 films

Thermal evaporation technique was used to prepare InSbSe3 films on clean glass substrates maintained at various deposition temperature (T-d = 473, 523 and 593 K). X- ray diffraction analysis showed the occurrence of amorphous to polycrystalline transformation in the films deposited at higher substrate temperature Td ? 523 K. Compositions of these films have been characterized by (EDX) analysis. Transmittance and reflectance measured in the wavelength rang (500-2500 nm), used to calculate the optical constant (refractive index n and absorption index k). The deposition temperature dependent of the optical constants n and k was determined in the spectral range. Analysis of optical absorption data as a function of Td yields the existence of wide band tails increase in width with increasing deposition temperature and indirect allowed transitions with optical energy gap decreases from 1.13 to 0.92 eV as the deposition temperature T-d increases from 423 to 593 K. The dispersion of the refractive index for films could be described using the Wemple - Di Domenico single oscillator model, change of the dispersion parameters were also studied as a function of deposition temperature. The high frequency dielectric constant. The ratio of the carrier concentration to the effective mass (N/m), relaxation time (tau), and dissipation factor (tan delta) were studied as a function of deposition temperature.