Formation of ErP islands on InP(001) surface by organometallic vapor phase epitaxy

被引：7
|
作者：
Bolotov, L [1 ]
Tsuchiya, J [1 ]
Fujiwara, Y [1 ]
Takeda, K [1 ]
Nakamura, A [1 ]
机构：
[1] NAGOYA UNIV, DEPT MAT SCI & ENGN, CHIKUSA KU, NAGOYA, AICHI 46401, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 11B期
关键词：
surface morphology; quantum dot; two-dimensional island; strained film; organometallic vapor phase epitaxy; semimetal-semiconductor interface; atomic force microscopy;
D O I：
10.1143/JJAP.36.L1534
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
First observation of ErP islands formed on InP(001) during Er-exposure by organometallic vapor phase epitaxy is demonstrated for 0.7-0.8ML coverage. Different features of the surface morphology for Er-exposed InP are observed depending on substrate temperatures. While large islands (200-300nm) are grown on the InP(001) surface at a substrate temperature of 530 degrees C, small dots (17-30nm) with the density of about 5 x 10(9) cm(-2) are formed at 580 degrees C. ErP islands are preferably grown along the [010] and [100] directions to decrease the lattice distortion.
引用
收藏
页码：L1534 / L1537
页数：4
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