Integration of carbon nanotubes with semiconductor technology:: fabrication of hybrid devices by III-V molecular beam epitaxy

We review a number of essential issues regarding the integration of carbon nanotubes in semiconductor devices for electronics: material compatibility, electrical contacts, functionalities, circuit architectures and reliability. In the second part of the paper, we present our own recent results on incorporation of singlewall nanotubes in III-V semiconductor heterostructures grown by molecular beam epitaxy (MBE). We demonstrate that singlewall carbon nanotubes can be overgrown using MBE; electrical contacts to the nanotubes are obtained by GaMnAs grown at 250 degrees C. The resulting devices can exhibit field effect action at room temperature.