Recent Progress in Growth of Single-Crystal Perovskites for Photovoltaic Applications

被引:44
|
作者
Trivedi, Suverna [1 ]
Prochowicz, Daniel [2 ]
Parikh, Nishi [3 ]
Mahapatra, Apurba [4 ]
Pandey, Manoj Kumar [3 ]
Kalam, Abul [5 ]
Tavakoli, Mohammad Mahdi [6 ]
Yadav, Pankaj [7 ]
机构
[1] Natl Inst Technol, Dept Chem Engn, Rourkela 769008, India
[2] Polish Acad Sci, Inst Phys Chem, PL-01224 Warsaw, Poland
[3] Pandit Deendayal Petr Univ, Sch Technol, Dept Sci, Gandhinagar 382007, Gujarat, India
[4] Natl Inst Technol, Dept Phys & Astron, Rourkela 769008, India
[5] King Khalid Univ, Fac Sci, Dept Chem, Abha 61413, Saudi Arabia
[6] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
[7] Pandit Deendayal Petr Univ, Sch Technol, Dept Solar Energy, Gandhinagar 382007, Gujarat, India
来源
ACS OMEGA | 2021年 / 6卷 / 02期
关键词
METHYLAMMONIUM LEAD IODIDE; SOLAR-CELL; MAPBI(3) PEROVSKITE; EFFICIENT; MIGRATION; CRYSTALLIZATION; MANAGEMENT; LIFETIMES; SUBSTRATE; DETECTORS;
D O I
10.1021/acsomega.0c04593
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The growth of high-quality single-crystal (SC) perovskite films is a great strategy for the fabrication of defect-free perovskite solar cells (PSCs) with photovoltaic parameters close to the theoretical limit, which resulted in high efficiency and superior stability of the device. Plenty of growth methods for perovskite SCs are available to achieve a maximum power conversion efficiency (PCE) surpassing 21% for SC-based PSCs. However, there is still a lot of room to further push the efficiency by considering new crystal growth techniques, interface engineering, passivation approaches, and additive engineering. In this review, we summarize the recent progress in the growth of SC-based perovskite films for the fabrication of high-efficiency and stable PSCs. We describe the impact of SC growth of perovskite films and their quality on the device performance and stability, compared with the commonly used polycrystal-line perovskite films. In the last section, the challenges and potential of SCs in PSCs are also covered for future development.
引用
收藏
页码:1030 / 1042
页数:13
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