Effects of Nitrogen in the Ga(N)As Barrier of GaInNAsSb Quantum Wells

被引：0
|
作者：
Jang, Y. D. [1 ]
Nguyen, D. H. [1 ]
Park, J. [1 ]
Lee, D. [1 ]
机构：
[1] Chungnam Natl Univ, Dept Phys, Daejeon 34134, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2016年 / 68卷 / 04期
基金：
新加坡国家研究基金会;
关键词：
GaInNAsSb; Quantum well; GaNAs barrier; Localization; Defect density; CONTACTLESS ELECTROREFLECTANCE; OPTICAL-PROPERTIES; MU-M; GROWTH; LASERS; SPECTROSCOPY; TEMPERATURE; TRANSITIONS; WAVELENGTH; STRAIN;
D O I：
10.3938/jkps.68.583
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have investigated the effects of nitrogen in the Ga(N)As barrier of an 1.5-mu m-emitting GaInNAsSb quantum well (QW) on the localization and the defect density. The QW with the GaNAs barrier emitted brighter photoluminescence at a longer wavelength at 10 K than the GaAs barrier and showed less carrier localization. The lifetime at 10 K was almost the same for the QWs both with and without nitrogen in the barrier, implying comparable defect densities. This result clearly supports that GaInNAsSb QWs with a GaNAs barrier can emit light at a longer wavelength without increasing either the defect density or the localization.
引用
收藏
页码：583 / 586
页数：4
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