Atomistic simulation of irradiation effects in GaN nanowires

被引：2

作者：

Ren, Wei ^{[1
]}

Kuronen, Antti ^{[1
]}

Nordlund, Kai ^{[1
]}

机构：

[1] Univ Helsinki, Dept Phys, FIN-00014 Helsinki, Finland

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2014年 / 326卷

基金：

芬兰科学院;

关键词：

Molecular dynamics simulations; Nanowires; Irradiation effects; Mechanical properties; MOLECULAR-DYNAMICS; ION; SEMICONDUCTORS; ENERGY;

D O I：

10.1016/j.nimb.2013.09.035

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We have studied effects of ion irradiation in GaN nanowires using classical molecular dynamics simulations. Nanowires with diameters of 3 and 4 nm were irradiated with 100 Ar ions at energies of 100 eV to 10 key corresponding to ion fluence of about 3 x 10(14) ions/cm(2). The structure of the nanowires was analyzed along with sputtering yields and mechanical properties in the form of Young's modulus. The results show a total sputtering yield of up to 8.3 sputtered atoms per ion and preferential sputtering of nitrogen with gallium to nitrogen ratio approximately 0.7. The Young's modulus of the nanowires was observed to decrease as a function of the irradiation dose with the largest relative effect observed for ion energies of 1 and 10 keV. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：15 / 18

页数：4

共 50 条

[1] Atomistic simulation of Er irradiation induced defects in GaN nanowires
20144100085458
[J]. Ullah, M.W., 1600, American Institute of Physics Inc. (116):
[2] Atomistic simulation of Er irradiation induced defects in GaN nanowires
Ullah, M. W.
Kuronen, A.
Stukowski, A.
Djurabekova, F.
Nordlund, K.
[J]. JOURNAL OF APPLIED PHYSICS, 2014, 116 (12)
[3] Atomistic simulation of random alloy fluctuations in InGaN/GaN nanowires
Sacconi, Fabio
Maur, Matthias Auf Der
Di Carlo, Aldo
Pecchia, Alessandro
[J]. 2014 INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE), 2014,
[4] Atomistic simulation of the size and orientation dependences of thermal conductivity in GaN nanowires
Wang, Zhiguo
Zu, Xiaotao
Gao, Fei
Weber, William J.
Crocombette, Jean-Paul
[J]. APPLIED PHYSICS LETTERS, 2007, 90 (16)
[5] Atomistic simulation of damage production by atomic and molecular ion irradiation in GaN
Ullah, M. W.
Kuronen, A.
Nordlund, K.
Djurabekova, F.
Karaseov, P. A.
Titov, A. I.
[J]. JOURNAL OF APPLIED PHYSICS, 2012, 112 (04)
[6] Atomistic simulation of plasticity in silicon nanowires
Cleri, Fabrizio
Ishida, Tadashi
Collard, Dominique
Fujita, Hiroyuki
[J]. APPLIED PHYSICS LETTERS, 2010, 97 (15)
[7] Atomistic simulation on the stiffening and softening mechanism of nanowires
Liang, H. Y.
Liu, G. R.
Han, X.
[J]. COMPUTATIONAL METHODS, PTS 1 AND 2, 2006, : 1667 - +
[8] Thermal conductivity prediction for GaN nanowires from atomistic potential
Jung, Kwangsub
Cho, Maenghyo
Zhou, Min
[J]. AIP ADVANCES, 2013, 3 (07):
[9] Stress characteristics of metal nanowires: An atomistic simulation study
[J]. Wuli Xuebao, 2008, 2 (1013-1018):
[10] An atomistic simulation study of cylindrical ultrathin CU nanowires
Kang, JW
Hwang, HJ
[J]. MOLECULAR SIMULATION, 2002, 28 (12) : 1021 - 1030

← 1 2 3 4 5 →