Photoluminescence spectra of GaN films grown at low temperature by compound-source molecular beam epitaxy

被引：0
|
作者：
Honda, Tohru [1 ]
Sawada, Masaru [1 ]
Kobayashi, Toshiaki [1 ]
Egawa, Shinichi [1 ]
Aoki, Yohta [1 ]
Akiyama, Miwako [1 ]
Kawanishi, Hideo [1 ]
机构：
[1] Kogakuin Univ, Dept Elect Engn, 2665-1 Nakano Machi, Hachioji, Tokyo 1920015, Japan
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 | 2006年 / 3卷 / 06期
关键词：
D O I：
10.1002/pssc.200565391
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The photoluminescence spectra of GaN films deposited by compound-source molecular beam epitaxy (CS-MBE) at 450 degrees C are reported. A near band-edge emission was observed from the GaN layers grown on (0001) 6H-SiC substartes by CS-MBE at 18 K. The cathodoluminescence spectra of the deposited films and GaN powders were also observed at 20 K. The emission intensity per film thickness of the deposited films is roughly the same as that of GaN powders. Electroluminescent devices were fabricated using the deposited films, and a UV light emission was observed from these devices. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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收藏
页码：1870 / 1873
页数：4
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