Microsecond time scale lateral-mode dynamics in a narrow stripe InGaN laser

被引：18
|
作者：
Eichler, C [1 ]
Hofstetter, D
Chow, WW
Miller, S
Weimar, A
Lell, A
Härle, V
机构：
[1] Univ Ulm, Optoelect Dept, D-89069 Ulm, Germany
[2] Univ Neuchatel, Inst Phys, CH-2000 Neuchatel, Switzerland
[3] Sandia Natl Labs, Albuquerque, NM 87185 USA
[4] OSRAM Opto Semicond, D-93049 Regensburg, Germany
来源：
APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 14期
关键词：
D O I：
10.1063/1.1691497
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Time-resolved measurements of the spectrum and the far field of InGaN-based laser diodes show lateral-mode changes and gradual tilting of the far field on a microsecond time scale. Numerical simulations based on a microscopic theory are in good agreement with the measurements. The observed effects are attributed to lateral carrier diffusion in combination with thermal lensing. (C) 2004 American Institute of Physics.
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页码：2473 / 2475
页数：3
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