Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits

被引：410

作者：

Lin, Yen-Fu ^{[1
,2
]}

Xu, Yong ^{[1
]}

Wang, Sheng-Tsung ^{[3
]}

Li, Song-Lin ^{[1
]}

Yamamoto, Mahito ^{[1
]}

Aparecido-Ferreira, Alex ^{[1
]}

Li, Wenwu ^{[1
]}

Sun, Huabin ^{[1
]}

Nakaharai, Shu ^{[1
]}

Jian, Wen-Bin ^{[3
]}

Ueno, Keiji ^{[4
]}

Tsukagoshi, Kazuhito ^{[1
]}

机构：

[1] Natl Inst Mat Sci, WPI Ctr Mat Nanoarchitechton WPI MANA, Tsukuba, Ibaraki 3050044, Japan

[2] Natl Chung Hsing Univ, Dept Phys, Taichung 40227, Taiwan

[3] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan

[4] Saitama Univ, Grad Sch Sci & Engn, Dept Chem, Saitama 3388570, Japan

来源：

ADVANCED MATERIALS | 2014年 / 26卷 / 20期

基金：

日本学术振兴会;

关键词：

FIELD-EFFECT TRANSISTORS; ELECTRICAL-CONDUCTIVITY; TEMPERATURE-DEPENDENCE; MOLYBDENUM-DISULFIDE; N-TYPE; MOBILITY; GRAPHENE; MOSE2; WSE2; GAP;

D O I：

10.1002/adma.201305845

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report ambipolar charge transport in a-molybdenum ditelluride (MoTe2) flakes, whereby the temperature dependence of the electrical characteristics was systematically analyzed. The ambipolarity of the charge transport originated from the formation of Schottky barriers at the metal/MoTe2 contacts. The Schottky barrier heights as well as the current on/off ratio could be modified by modulating the electrostatic fields of the back-gate voltage (V-bg) and drain-source voltage (V-ds). Using these ambipolar MoTe2 transistors we fabricated complementary inverters and amplifiers, demonstrating their feasibility for future digital and analog circuit applications.

引用

页码：3263 / +

页数：8

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