Analysis of Solder Bump Electromigration Reliability

被引：0

作者：

Ceric, H. ^{[1
,2
]}

de Orio, R. L. ^{[2
]}

Selberherr, S. ^{[2
]}

机构：

[1] TU Wien, Inst Microelect, Christian Doppler Lab Reliabil Issues Microelect, Gusshausstr 27-29, A-1040 Vienna, Austria

[2] TU Wien, Inst Microelect, A-1040 Vienna, Austria

来源：

PROCEEDINGS OF THE 2013 20TH IEEE INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2013) | 2013年

关键词：

DIFFUSION MECHANISMS; MODEL;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the realization of modern integrated circuits new interconnect structures like through-silicon-vias and solder bumps, together with complex multilevel 3D interconnect structures are gaining importance. The application of these new structures unavoidably rises different reliability issues like thermal gradients, electromigration, and stressmigration. In this paper we apply state-of-the art TCAD methods for studying electromigration in Sn solder bump. The results and discussion of the studied case have essentially improved the understanding of the role of Sn crystal anisotropy in degradation mechanism of solder bump.

引用

页码：705 / 708

页数：4

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