Effects of Temperature on the Performance of Hf0.5Zr0.5O2-Based Negative Capacitance FETs

There arises the growing interest of negative capacitance field effect transistors (NCFETs) for low-power applications, however, temperature as an inevitable influencing factor, its effects on NCFETs require more research for practical applications. In this work, we fabricated Hf0.5Zr0.5O2(HZO) based NC p-channel FETs and developed a corresponding TCAD simulation deck to study the temperature impact. DC characteristics of NCFETs and its baseline MOSFETs at the common operation temperature range (-50 to 85 degrees C) are measured and simulated. With the increase of temperature, NCFET subthreshold slope (SS) increasesmuch faster thank T/q demonstratingpyroelectric effect, and exceeds kT/q at similar to 350K and baseline MOSFETs at similar to 360K. Similarly, its on-current decreases more rapidly than baselinedevices. Finally, we explained the temperature characteristics of NCFET with the help of a developedmodel through Landau-Khalatnikov (L-K) theory and temperature dependent internal gain (A(V)).