共 16 条
- [1] Monte Carlo simulation of 50nm n-channel Schottky barrier tunneling transistorsCHINESE JOURNAL OF ELECTRONICS, 2002, 11 (02): : 200 - 203Du, G论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Inst Microelect, Beijing 100871, Peoples R China Peking Univ, Inst Microelect, Beijing 100871, Peoples R ChinaLiu, XY论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Inst Microelect, Beijing 100871, Peoples R ChinaSun, L论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Inst Microelect, Beijing 100871, Peoples R ChinaYue, JP论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Inst Microelect, Beijing 100871, Peoples R ChinaHan, RQ论文数: 0 引用数: 0 h-index: 0机构: Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
- [2] A 50nm high-k poly silicon gate stack with a buried SiGe channel2007 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS, 2007, : 30 - +Jakschik, S.论文数: 0 引用数: 0 h-index: 0机构: Infineon, Kapeldreef 75, B-3001 Heverlee, Belgium Infineon, Kapeldreef 75, B-3001 Heverlee, BelgiumHoffmann, T.论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Heverlee, Belgium Infineon, Kapeldreef 75, B-3001 Heverlee, BelgiumCho, H. -J.论文数: 0 引用数: 0 h-index: 0机构: Samsung, B-3001 Heverlee, Belgium Infineon, Kapeldreef 75, B-3001 Heverlee, BelgiumVeloso, A.论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Heverlee, Belgium Infineon, Kapeldreef 75, B-3001 Heverlee, BelgiumLoo, R.论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Heverlee, Belgium Infineon, Kapeldreef 75, B-3001 Heverlee, BelgiumHyun, S.论文数: 0 引用数: 0 h-index: 0机构: Samsung, B-3001 Heverlee, Belgium Infineon, Kapeldreef 75, B-3001 Heverlee, BelgiumSorada, H.论文数: 0 引用数: 0 h-index: 0机构: Infineon, Kapeldreef 75, B-3001 Heverlee, BelgiumInoue, A.论文数: 0 引用数: 0 h-index: 0机构: Infineon, Kapeldreef 75, B-3001 Heverlee, BelgiumPotter, M. d.论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Heverlee, Belgium Infineon, Kapeldreef 75, B-3001 Heverlee, BelgiumEneman, G.论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Heverlee, Belgium Katholieke Univ Leuven, B-3001 Heverlee, Belgium Fund Sci Res Flanders, B-3001 Heverlee, Belgium Infineon, Kapeldreef 75, B-3001 Heverlee, BelgiumSeveri, S.论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Heverlee, Belgium Katholieke Univ Leuven, B-3001 Heverlee, Belgium Infineon, Kapeldreef 75, B-3001 Heverlee, BelgiumAbsil, P.论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Heverlee, Belgium Infineon, Kapeldreef 75, B-3001 Heverlee, BelgiumBiesemans, S.论文数: 0 引用数: 0 h-index: 0机构: IMEC, B-3001 Heverlee, Belgium Infineon, Kapeldreef 75, B-3001 Heverlee, Belgium
- [3] Manufacturability issues with Double Patterning for 50nm half pitch single damascene applications, using RIELACS® shrink and corresponding OPCOPTICAL MICROLITHOGRAPHY XX, PTS 1-3, 2007, 6520de Beeck, Maaike Op论文数: 0 引用数: 0 h-index: 0机构: IMEC, Kapeldreef 75, B-3001 Louvain, Belgium IMEC, Kapeldreef 75, B-3001 Louvain, BelgiumVersluijs, Janko论文数: 0 引用数: 0 h-index: 0机构: IMEC, Kapeldreef 75, B-3001 Louvain, Belgium IMEC, Kapeldreef 75, B-3001 Louvain, BelgiumWiaux, Vincent论文数: 0 引用数: 0 h-index: 0机构: IMEC, Kapeldreef 75, B-3001 Louvain, Belgium IMEC, Kapeldreef 75, B-3001 Louvain, BelgiumVandeweyer, Tom论文数: 0 引用数: 0 h-index: 0机构: IMEC, Kapeldreef 75, B-3001 Louvain, Belgium IMEC, Kapeldreef 75, B-3001 Louvain, BelgiumCiofi, Ivan论文数: 0 引用数: 0 h-index: 0机构: IMEC, Kapeldreef 75, B-3001 Louvain, Belgium IMEC, Kapeldreef 75, B-3001 Louvain, BelgiumStruyf, Herbert论文数: 0 引用数: 0 h-index: 0机构: IMEC, Kapeldreef 75, B-3001 Louvain, Belgium IMEC, Kapeldreef 75, B-3001 Louvain, BelgiumHendrickx, Dirk论文数: 0 引用数: 0 h-index: 0机构: IMEC, Kapeldreef 75, B-3001 Louvain, Belgium IMEC, Kapeldreef 75, B-3001 Louvain, BelgiumVan Olmen, Jan论文数: 0 引用数: 0 h-index: 0机构: IMEC, Kapeldreef 75, B-3001 Louvain, Belgium IMEC, Kapeldreef 75, B-3001 Louvain, Belgium
- [4] 50nm SOICMOS transistors with ultra shallow junction using laser annealing and pre-amorphization implantation2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2001, : 69 - 70Park, C论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90024 USA Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90024 USAKim, SD论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90024 USA Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90024 USAWang, Y论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90024 USA Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90024 USATalwar, S论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90024 USA Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90024 USAWoo, JCS论文数: 0 引用数: 0 h-index: 0机构: Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90024 USA Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90024 USA
- [5] A 90 nm logic technology featuring 50nm strained silicon channel transistors, 7 layers of Cu interconnects, low k ILD, and 1 um2 SRAM cellINTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST, 2002, : 61 - 64Thompson, S论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAAnand, N论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAArmstrong, M论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAAuth, C论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAArcot, B论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAAlavi, M论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USABai, P论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USABielefeld, J论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USABigwood, R论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USABrandenburg, J论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USABuehler, M论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USACea, S论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAChikarmane, V论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAChoi, C论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAFrankovic, R论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAGhani, T论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAGlass, G论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAHan, W论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAHoffmann, T论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAHussein, M论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAJacob, P论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAJain, A论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAJan, C论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAJoshi, S论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAKenyon, C论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAKlaus, J论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAKlopcic, S论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USALuce, J论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAMa, Z论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAMcintyre, B论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAMistry, K论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAMurthy, A论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USANguyen, P论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAPearson, H论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USASandford, T论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USASchweinfurth, R论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAShaheed, R论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USASivakumar, S论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USATaylor, M论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USATufts, B论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAWallace, C论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAWang, P论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USAWeber, C论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USABohr, M论文数: 0 引用数: 0 h-index: 0机构: Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA
- [6] High performance 50nm T-gate In0.52A10.48As/In0.53Ga0.47As metamorphic high electron mobility transistorsESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2003, : 517 - 519Cao, X论文数: 0 引用数: 0 h-index: 0机构: Univ Glasgow, Nanoelectr Res Ctr, Glasgow G12 8LT, Lanark, Scotland Univ Glasgow, Nanoelectr Res Ctr, Glasgow G12 8LT, Lanark, ScotlandThayne, I论文数: 0 引用数: 0 h-index: 0机构: Univ Glasgow, Nanoelectr Res Ctr, Glasgow G12 8LT, Lanark, Scotland Univ Glasgow, Nanoelectr Res Ctr, Glasgow G12 8LT, Lanark, ScotlandThoms, S论文数: 0 引用数: 0 h-index: 0机构: Univ Glasgow, Nanoelectr Res Ctr, Glasgow G12 8LT, Lanark, Scotland Univ Glasgow, Nanoelectr Res Ctr, Glasgow G12 8LT, Lanark, ScotlandHolland, M论文数: 0 引用数: 0 h-index: 0机构: Univ Glasgow, Nanoelectr Res Ctr, Glasgow G12 8LT, Lanark, Scotland Univ Glasgow, Nanoelectr Res Ctr, Glasgow G12 8LT, Lanark, ScotlandStanley, C论文数: 0 引用数: 0 h-index: 0机构: Univ Glasgow, Nanoelectr Res Ctr, Glasgow G12 8LT, Lanark, Scotland Univ Glasgow, Nanoelectr Res Ctr, Glasgow G12 8LT, Lanark, Scotland
- [7] High performance 50nm T-Gate In0.52Al0.48As/In0.70Ga0.30As pseudomorphic high electron mobility transistors2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings, 2004, : 292 - 294Cao, X论文数: 0 引用数: 0 h-index: 0机构: Univ Glasgow, Dept Elect & Elect Engn, Ultrafast Syst Grp, Glasgow G12 8LT, Lanark, Scotland Univ Glasgow, Dept Elect & Elect Engn, Ultrafast Syst Grp, Glasgow G12 8LT, Lanark, ScotlandThoms, S论文数: 0 引用数: 0 h-index: 0机构: Univ Glasgow, Dept Elect & Elect Engn, Ultrafast Syst Grp, Glasgow G12 8LT, Lanark, Scotland Univ Glasgow, Dept Elect & Elect Engn, Ultrafast Syst Grp, Glasgow G12 8LT, Lanark, ScotlandMcLelland, H论文数: 0 引用数: 0 h-index: 0机构: Univ Glasgow, Dept Elect & Elect Engn, Ultrafast Syst Grp, Glasgow G12 8LT, Lanark, Scotland Univ Glasgow, Dept Elect & Elect Engn, Ultrafast Syst Grp, Glasgow G12 8LT, Lanark, ScotlandElgaid, K论文数: 0 引用数: 0 h-index: 0机构: Univ Glasgow, Dept Elect & Elect Engn, Ultrafast Syst Grp, Glasgow G12 8LT, Lanark, Scotland Univ Glasgow, Dept Elect & Elect Engn, Ultrafast Syst Grp, Glasgow G12 8LT, Lanark, ScotlandStanley, C论文数: 0 引用数: 0 h-index: 0机构: Univ Glasgow, Dept Elect & Elect Engn, Ultrafast Syst Grp, Glasgow G12 8LT, Lanark, Scotland Univ Glasgow, Dept Elect & Elect Engn, Ultrafast Syst Grp, Glasgow G12 8LT, Lanark, ScotlandThayne, I论文数: 0 引用数: 0 h-index: 0机构: Univ Glasgow, Dept Elect & Elect Engn, Ultrafast Syst Grp, Glasgow G12 8LT, Lanark, Scotland Univ Glasgow, Dept Elect & Elect Engn, Ultrafast Syst Grp, Glasgow G12 8LT, Lanark, Scotland
- [8] High-Frequency Flexible Graphene Field-Effect Transistors with Short Gate Length of 50nm and Record Extrinsic Cut-Off FrequencyPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2018, 12 (05):Yu, Cui论文数: 0 引用数: 0 h-index: 0机构: Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R China Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R ChinaHe, Zezhao论文数: 0 引用数: 0 h-index: 0机构: Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R China Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R ChinaSong, Xubo论文数: 0 引用数: 0 h-index: 0机构: Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R China Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R ChinaLiu, Qingbin论文数: 0 引用数: 0 h-index: 0机构: Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R China Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R ChinaGao, Libo论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ, Sch Phys, Collaborat Innovat Ctr Adv Microstruct, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R ChinaYao, Bing论文数: 0 引用数: 0 h-index: 0机构: Nanjing Univ, Sch Phys, Collaborat Innovat Ctr Adv Microstruct, Natl Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R ChinaHan, Tingting论文数: 0 引用数: 0 h-index: 0机构: Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R China Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R ChinaGao, Xuedong论文数: 0 引用数: 0 h-index: 0机构: Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R China Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R ChinaLv, Yuanjie论文数: 0 引用数: 0 h-index: 0机构: Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R China Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R ChinaFeng, Zhihong论文数: 0 引用数: 0 h-index: 0机构: Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R China Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R ChinaCai, Shujun论文数: 0 引用数: 0 h-index: 0机构: Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R China Hebei Semicond Res Inst, Natl Key Lab ASIC, Shijiazhuang 050051, Hebei, Peoples R China
- [9] Enhanced mobility of Sn-doped Ge thin-films (≤50nm) on insulator for fully depleted transistors by nucleation-controlled solid-phase crystallizationAPPLIED PHYSICS LETTERS, 2019, 115 (04)Xu, Chang论文数: 0 引用数: 0 h-index: 0机构: Kyushu Univ, Dept Elect, 744 Motooka, Fukuoka, Fukuoka 8190395, Japan Kyushu Univ, Dept Elect, 744 Motooka, Fukuoka, Fukuoka 8190395, JapanGong, Xiangsheng论文数: 0 引用数: 0 h-index: 0机构: Kyushu Univ, Dept Elect, 744 Motooka, Fukuoka, Fukuoka 8190395, Japan Kyushu Univ, Dept Elect, 744 Motooka, Fukuoka, Fukuoka 8190395, JapanMiyao, Masanobu论文数: 0 引用数: 0 h-index: 0机构: Kyushu Univ, Dept Elect, 744 Motooka, Fukuoka, Fukuoka 8190395, Japan Kyushu Univ, Dept Elect, 744 Motooka, Fukuoka, Fukuoka 8190395, Japan论文数: 引用数: h-index:机构:
- [10] COST-EFFECTIVE MOSFET-TRANSISTORS ON BULK SILICON IN THE DEEP SUB-50 NM-REGION2009 6TH INTERNATIONAL MULTI-CONFERENCE ON SYSTEMS, SIGNALS AND DEVICES, VOLS 1 AND 2, 2009, : 985 - +Kallis, Klaus T.论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Dortmund, Intelligent Microsyst Inst, Fac Elect Engn & Informat Technol, Emil Figge Str 68, D-44221 Dortmund, Germany Tech Univ Dortmund, Intelligent Microsyst Inst, Fac Elect Engn & Informat Technol, Emil Figge Str 68, D-44221 Dortmund, GermanyHorstmann, John T.论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Chemnitz, Fac Elect Engn & Informat Technol, Chair Elect Devices Micro & Nano Technique, D-09107 Chemnitz, Germany Tech Univ Dortmund, Intelligent Microsyst Inst, Fac Elect Engn & Informat Technol, Emil Figge Str 68, D-44221 Dortmund, GermanyKuechenmeister, Christian论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Dortmund, Intelligent Microsyst Inst, Fac Elect Engn & Informat Technol, Emil Figge Str 68, D-44221 Dortmund, Germany Tech Univ Dortmund, Intelligent Microsyst Inst, Fac Elect Engn & Informat Technol, Emil Figge Str 68, D-44221 Dortmund, GermanyKeller, Lars O.论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Dortmund, Intelligent Microsyst Inst, Fac Elect Engn & Informat Technol, Emil Figge Str 68, D-44221 Dortmund, Germany Tech Univ Dortmund, Intelligent Microsyst Inst, Fac Elect Engn & Informat Technol, Emil Figge Str 68, D-44221 Dortmund, GermanyFiedler, Horst L.论文数: 0 引用数: 0 h-index: 0机构: Tech Univ Dortmund, Intelligent Microsyst Inst, Fac Elect Engn & Informat Technol, Emil Figge Str 68, D-44221 Dortmund, Germany Tech Univ Dortmund, Intelligent Microsyst Inst, Fac Elect Engn & Informat Technol, Emil Figge Str 68, D-44221 Dortmund, Germany