Top-seeded solution growth of three-inch-diameter 4H-SiC using convection control technique

被引：46

作者：

Kusunoki, Kazuhiko ^{[1
,3
]}

Okada, Nobuhiro ^{[1
]}

Kamei, Kazuhito ^{[1
]}

Moriguchi, Koji ^{[1
]}

Daikoku, Hironori ^{[2
]}

Kado, Motohisa ^{[2
]}

Sakamoto, Hidemitsu ^{[2
]}

Bessho, Takeshi ^{[2
]}

Ujihara, Toru ^{[3
]}

机构：

[1] Nippon Steel & Sumitomo Met Corp, Adv Technol Res Labs, Amagasaki, Hyogo 6600891, Japan

[2] Toyota Motor Co Ltd, Higashifuji Tech Ctr, Susono, Shizuoka 4101193, Japan

[3] Nagoya Univ, Dept Mat Sci & Engn, Nagoya, Aichi 4648603, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2014年 / 395卷

关键词：

Computer simulation; Fluid flows; Morphological stability; Growth from high temperature solutions; Top-seeded solution growth; Semiconducting silicon compounds; CARBIDE SINGLE-CRYSTALS;

D O I：

10.1016/j.jcrysgro.2014.03.006

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The top-seeded solution growth of 4H-SiC at three inches in diameter has been investigated using Si-Ti alloy as a solvent. A perforated graphite disk called "immersion guide" (IG) was positioned in the solution in order to control solution flow. The morphological instability was improved and growth rate was significantly increased using the IG compared with conventional growth without the IG. Numerical fluid flow analysis with coupled heat and mass transportation was performed as well to understand convection and growth behavior. The origins of these improvements in the growth performance are discussed based on the numerical results. By controlling solution flow, we could successfully grow a three-inch-diameter 4H-SiC with 4-mm thickness. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：68 / 73

页数：6

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[J]. (1) Technical Research and Development Bureau, Nippon Steel and Sumitomo Metal Corporation, Fuso-cho 1-8, Amagasaki, Hyogo 660-0891, Japan; (2) Higashifuji Technical Center, Toyota Motor Corporation 1200, Mishuku, Susono, Shizuoka 410-1193, Japan; (3) Department of Material Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, 464-8603, Japan, 1600, Cree Inc.; et al; Mitsubishi Electric Corporation; Research Institute for Applied Sciences; The Japan Society of Applied Physics; Tokyo Electron Limited (Trans Tech Publications Ltd): : 778 - 780
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