Temperature dependence of band gap ratio and Q-factor defect mode in a semiconductor quaternary alloy hexagonal photonic-crystal hole slab

被引：5

作者：

Sanchez-Cano, R. ^{[1
]}

Porras-Montenegro, N. ^{[2
]}

机构：

[1] Univ Autonoma Occidente, Dept Fis, Cali 2790, Colombia

[2] Univ Valle, Dept Fis, Cali 25360, Colombia

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2016年 / 122卷 / 04期

关键词：

LIGHT;

D O I：

10.1007/s00339-016-9906-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present numerical predictions for the photonic TE-like band gap ratio and the quality factors of symmetric localized defect as a function of the thickness slab and temperature by the use of plane wave expansion and the finite-difference time-domain methods. The photonic-crystal hole slab is composed of a 2D hexagonal array with identical air holes and a circular cross section, embedded in a non-dispersive III-V semiconductor quaternary alloy slab, which has a high value of dielectric function in the near-infrared region, and the symmetric defect is formed by increasing the radius of a single hole in the 2D hexagonal lattice. We show that the band gap ratio depends linearly on the temperature in the range 150-400 K. Our results show a strong temperature dependence of the quality factor Q, the maximum (Q = 7000) is reached at T = 350K; but if the temperature continues to increase, the efficiency drops sharply. Furthermore, we present numerical predictions for the electromagnetic field distribution at T = 350K:

引用

页数：6

共 7 条

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R. Sánchez-Cano
N. Porras-Montenegro
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