Electroluminescence from Alq3-Containing Electron-Beam Resists for Light-Emitting Organic Nanometer-Scale Devices

被引:2
|
作者
Nakajima, And [1 ]
Sakurai, Hiroki [1 ]
Abe, Shuhei [1 ]
机构
[1] Hiroshima Univ, Res Inst Nanodevice & Bio Syst, Hiroshima 7398527, Japan
关键词
nanometer-scale OLED; electron-beam resist; ZEP520A; Alq(3); composite material; electroluminescence; ACTIVATED DELAYED FLUORESCENCE; FABRICATION; EFFICIENCY; POLYMERS; FIELD;
D O I
10.1021/acsanm.0c01980
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A simple method was developed for fabricating current-drivable light-emitting organic structures with lateral sizes on the nanometer scale. Appropriate synthesis conditions for organic electron-beam (EB) resist copolymers of ZEPS20A containing 8-hydroxyquinoline aluminum (Alq(3)) were determined for the structures. Square layer structures with side lengths of less than 1 mu m were fabricated using this composite resist simply by EB exposure and development. Green electroluminescence attributed to the emission from Alg a was observed from the devices with the composite resist. This method opens the door to the development of organic quantum-information devices, near-field optical microscopy, nanoscale photopatterning, high-resolution light-emitting diodes, and highly sensitive biosensors.
引用
收藏
页码:11688 / 11694
页数:7
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