Characterization of SiC Trench MOSFETs in a Low-Inductance Power Module Package

This paper evaluates the temperature-dependent static and switching characteristics of SiC Trench MOSFETs in a low-inductance multiple-chip power module. First, a phase-leg power module package design with integrated decoupling capacitance is proposed and fabricated based on the P-cell/N-cell concept, and the module design including the substrate layout and packaging material selection are discussed. With the fabricated power module, the temperature-dependent static and switching characteristics of the SiC Trench MOSFETs are comprehensively investigated, and the key performance differences from the traditional SiC planar MOSFETs are discussed. Specifically, compared to the SiC MOSFETs with planar structure, the SiC Trench MOSFETs are observed to have a different temperature coefficient in term of the turn-OFF switching loss. Detailed analysis is provided as well to explain the experimental results.