SOI-based, High Reliable Pressure Sensor with Floating Concept for High Temperature Applications

被引:23
|
作者
Giuliani, Andrea [1 ]
Drera, Lionello [1 ]
Arancio, Domenico [1 ]
Mukhopadhyay, Biswaijit [2 ]
Ngo, Ha-Duong [2 ]
机构
[1] Gefran SpA, Sensors Div, Brescia, Italy
[2] Tech Univ Berlin, Ctr Microperipher Technol, Berlin, Germany
关键词
SOI sensor; pressure sensor; high temperature sensor; plastixc estrusion; melt pressure; harsh environment; plastic molding; fluid free sensor; EN; 13849-1; sensor;
D O I
10.1016/j.proeng.2014.11.639
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this paper we present a high reliable, accurate and safe, solid state pressure sensor for high temperature applications. The sensor is based on an unique fluid-free technology using a piezoresistive SOI-based chip enclosed in a sealed metal housing. The proprietary housing concept allows a complete separation of the SOI-chip from the measured media. A thick steel membrane and an elongated member (push-rod) transfer the outside pressure into a small deflection of a silicon membrane on the SOI-chip. The thin silicon membrane is engraved by DRIE (Deep Reactive Ion Etching). The sensor is capable to measure pressures up to 1000 bar at temperature up to 400 degrees C with an accuracy of +/- 0,50 %FSO. A digital correction enables a compensation of Offset and Sensitivity thermal drifts. The sensor can undergo long-term extreme working conditions without losing its performances. (C) 2014 Published by Elsevier Ltd.
引用
收藏
页码:720 / 723
页数:4
相关论文
共 50 条
  • [1] SOI-Based Integrated Circuits for High-Temperature Power Electronics Applications
    Greenwell, R. L.
    McCue, B. M.
    Zuo, L.
    Huque, M. A.
    Tolbert, L. M.
    Blalock, B. J.
    Islam, S. K.
    2011 TWENTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC), 2011, : 836 - 843
  • [2] Liquid-Free, Piezoresistive, SOI-Based Pressure Sensor for High Temperature Measurements up to 400 °C
    Ha-Duong Ngo
    Mukhopadhyay, Biswaijit
    Vu Cong Thanh
    Mackowiak, Peter
    Schlichting, Volker
    Obermeier, Ernst
    Lang, Klaus-Dieter
    Giuliani, Andrea
    Drera, Lionello
    Arancio, Domenico
    2012 IEEE SENSORS PROCEEDINGS, 2012, : 958 - 961
  • [3] A Micro SOI Pressure Sensor With Compensation Hole for High Temperature Applications
    Liu, Fangting
    He, Feng
    Tang, Xin
    Li, Junhui
    IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2024, 14 (03): : 351 - 358
  • [4] A novel SOI pressure sensor for high temperature application
    李赛男
    梁庭
    王伟
    洪应平
    郑庭丽
    熊继军
    Journal of Semiconductors, 2015, 36 (01) : 124 - 128
  • [5] A novel SOI pressure sensor for high temperature application
    Li Sainan
    Liang Ting
    Wang Wei
    Hong Yingping
    Zheng Tingli
    Xiong Jijun
    JOURNAL OF SEMICONDUCTORS, 2015, 36 (01)
  • [6] Design and majorization of SOI high temperature pressure sensor
    Yao, Zhi Jun
    Zhao, Jun
    Li, Zheng
    PROCEEDINGS OF THE 2ND INTERNATIONAL FORUM ON MANAGEMENT, EDUCATION AND INFORMATION TECHNOLOGY APPLICATION (IFMEITA 2017), 2017, 130 : 533 - 536
  • [7] A novel SOI pressure sensor for high temperature application
    李赛男
    梁庭
    王伟
    洪应平
    郑庭丽
    熊继军
    Journal of Semiconductors, 2015, (01) : 124 - 128
  • [8] An SOI-based high-voltage, high-temperature gate-driver for SiCFET
    Huque, M. A.
    Vijayaraghavan, R.
    Zhang, M.
    Blalock, B. J.
    Tolbert, L. M.
    Islam, S. K.
    2007 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-6, 2007, : 1491 - 1495
  • [9] High temperature high accuracy piezoresistive pressure sensor based on smart-cut SOI
    Guo, Shuwen
    Eriksen, Harald
    Childress, Kimiko
    Fink, Anita
    Hoffman, Mary
    MEMS 2008: 21ST IEEE INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS, TECHNICAL DIGEST, 2008, : 892 - 895
  • [10] Bulk-micromachined, SOI-based half-bridge silicon strain gauges for high pressure applications
    Kim, Jin Woong
    Kim, Ki Beom
    Kim, Joon Hyub
    Min, Nam Ki
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2018, 28 (12)