Some physical properties of CuInSe2 thin films

被引：15
|
作者：
Ashour, A. [1 ]
机构：
[1] Menia Univ, Fac Sci, Dept Phys, Minia, Egypt
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2006年 / 17卷 / 08期
关键词：
D O I：
10.1007/s10854-006-0009-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Semiconducting thin films of CuInSe2 have been grown by thermal annealing in air of evaporated layers of Cu, In and Se on glass substrates. The structure of the films has been studied using the X-ray diffraction (XRD). The films were polycrystalline and showed mixture phases (binary and ternary) depending on the annealing temperature. The electrical properties revealed resistivity range of 10(1)-10(4)Omega cm, respectively. The resistivity influenced with the annealing temperature and decreased with increasing temperature. The films have been analyzed for optical band gap.
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页码：625 / 629
页数：5
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