Effects of surface-segregated sulfur on primary texture and surface-energy-induced selective grain growth in ultra-thin 3% silicon-iron alloy

被引:0
|
作者
Cho, SS
Kim, SB
Choi, YS
Chai, KH
Oh, JM
Han, SO
Heo, NH
机构
[1] Korea Elect Power Res Inst, Adv Energy & Technol Grp, Yusung Gu, Taejon 305380, South Korea
[2] Chungnam Natl Univ, Dept Elect Engn, Taejon 305380, South Korea
来源
关键词
heating rate; nucleation; recrystallization; segregated sulfur; selective grain growth;
D O I
10.4028/www.scientific.net/MSF.408-412.1299
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Correlation between surface-segregated sulfur, nucleation, surface-energy-induced selective growth and final texture is investigated in 40mum thick 3%Si-Fe strips containing 90ppm bulk content of sulfur. At a fixed final reduction, the final texture after direct isothermal annealing is transited from {100} <uvw> to {110) <001> with increasing flow rate of hydrogen. Such a dependence of final texture on flow rate of hydrogen results from the decrease in concentration of surface-segregated sulfur by the active formation of H2S, the followed decrease in selective growth time period of {100} <uvw> grains and the resultant increase in survival probability of {110} <001> grains after the selective growth of (100) <uvw> grains. At a fixed flow rate of hydrogen, the change in final texture of {110} <uvw> to {110} <001> with increasing heating rate is due to the lower concentration of segregated sulfur that is favorable for the nucleation of the {110} <001> Goss embryos.
引用
收藏
页码:1299 / 1304
页数:6
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