Mode locking of a GaInN semiconductor laser with an internal saturable absorber

被引：10
|
作者：
Yoshita, Masahiro [1 ]
Kuramoto, Masaru [2 ]
Ikeda, Masao [1 ,2 ]
Yokoyama, Hiroyuki [1 ]
机构：
[1] Tohoku Univ, New Ind Creat Hatchery Ctr NICHe, Aoba Ku, Sendai, Miyagi 9808579, Japan
[2] Sony Corp, Adv Mat Labs, Kanagawa 2430014, Japan
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 06期
关键词：
gallium compounds; III-V semiconductors; indium compounds; laser cavity resonators; laser mode locking; optical modulation; optical pulse generation; optical saturable absorption; semiconductor lasers; wide band gap semiconductors; INGAN LASER; PULSE; DIODES;
D O I：
10.1063/1.3079403
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrated the mode locking of an external-cavity 404 nm GaInN semiconductor laser diode with an internal saturable absorber layer for the first time. Stable passive mode locking was confirmed at a repetition rate of 840 MHz. Furthermore, hybrid mode-locking operation incorporating rf current modulation generated optical pulses of 20 ps duration and 0.4 W peak power.
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页数：3
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