Magnetic-field-induced cavity polariton linewidth reduction in a GaAs/Al0.1Ga0.9As microcavity

被引:5
|
作者
Harel, R [1 ]
Cohen, E
Ron, A
Linder, E
Pfeiffer, LN
机构
[1] Technion Israel Inst Technol, Inst Solid State, IL-32000 Haifa, Israel
[2] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
关键词
D O I
10.1103/PhysRevB.60.11550
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The magnetic-field (B less than or equal to 7 T) effect on the cavity polaritons linewidth is studied by reflection spectroscopy at T=2-5 K. The structure under study consists of a single 160-Angstrom GaAs/AlAs quantum well (QW) embedded in a lambda-wide Al0.1Ga0.9As microcavity (MC) that is cladded by Al0.1Ga0.9As/AlAs distributed Bragg reflectors. The QW absorption abo re the QW band gap, E>E(e1-hh1), is flat and it transforms into a series of well-defined bands (Landau transitions or magnetoexcitons) under a perpendicularly applied magnetic field. This results in a narrowing of the MC mode by about 30% when E-MC>E(e1-hh1). We analyze the reflection spectra by using the linear dispersion model based on the transfer-matrix formalism and introducing the (e1:hh1)1S, (e1:lh1)1S excitons and the N=1 and N=2 interband Landau transitions as Lorentzian oscillators. The model explains well the reduction in the the mode linewidth, under the applied magnetic field, as due to the change in the absorption spectrum caused by the transformation from a two- to zero-dimensional electronic density of states. It is also found that the MC mode linewidth and intensity, in the spectral range E-MC<E(e1:hh1)1S, are strongly affected by below-band-gap residual absorption of the Al0.1Ga0.9As layers. [S0163-1829(99)08239-9].
引用
收藏
页码:11550 / 11556
页数:7
相关论文
共 23 条
  • [2] Optical properties of delta-doped GaAs and GaAs/Al0.1Ga0.9As superlattices
    Cheng, WC
    Xia, JB
    Xu, SJ
    Zheng, HZ
    Luo, KJ
    Zhang, PH
    Yang, XP
    ACTA PHYSICA SINICA-OVERSEAS EDITION, 1996, 5 (06): : 463 - 469
  • [3] Effect of Al0.1Ga0.9As thickness on the structural, optical, thermal, and electrical properties of (Al0.1 Ga 0.9As)/GaAs heterojunctions
    Al-Naghmaish, Aishah
    Ghrib, Taher
    Dakhlaoui, Hassen
    AL-Saleem, Nouf K.
    Ercan, Filiz
    Kayed, Tarek S.
    Elibol, Erdem
    Ercan, Ismail
    Yildiz, Mesut
    Elshekhipy, Abdelhafeez A.
    Almalki, Nawal
    MICRO AND NANOSTRUCTURES, 2023, 177
  • [4] Optimization of the Structure of a GaInP/GaAs/Ge Triple-Junction Solar Cell with an Al0.1Ga0.9As/Al0.8Ga0.2As Integrated Bragg Reflector
    Skachkov, A. F.
    OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING, 2014, 50 (04) : 423 - 427
  • [5] Electron spin dynamics and hyperfine interactions in Fe/Al0.1Ga0.9As/GaAs spin injection heterostructures -: art. no. 155308
    Strand, J
    Lou, X
    Adelmann, C
    Schultz, BD
    Isakovic, AF
    Palmstrom, CJ
    Crowell, PA
    PHYSICAL REVIEW B, 2005, 72 (15)
  • [6] ELECTRIC AND MAGNETIC-FIELD-INDUCED DIMENSIONALITY REDUCTION IN INGAAS GAAS SUPERLATTICES
    ROTH, A
    LUGAGNEDELPON, E
    VOISIN, P
    CANADIAN JOURNAL OF PHYSICS, 1992, 70 (10-11) : 819 - 823
  • [7] COMPETITION BETWEEN MAGNETIC-FIELD-INDUCED AND ELECTRIC-FIELD-INDUCED LOCALIZATIONS IN GAAS/GA0.65AL0.35AS SUPERLATTICES
    ALEXANDROU, A
    DIGNAM, MM
    MENDEZ, EE
    SIPE, JE
    HONG, JM
    PHYSICAL REVIEW B, 1991, 44 (23): : 13124 - 13127
  • [8] Magnetic-field-induced charged exciton studies in a GaAs/Al0.3Ga0.7As single heterojunction
    Kim, Y
    Munteanu, FM
    Perry, CH
    Rickel, DG
    Simmons, JA
    Reno, JL
    PHYSICAL REVIEW B, 2000, 61 (07): : 4492 - 4495
  • [9] Spin injection from the Heusler alloy CO2MnGe into Al0.1Ga0.9As/GaAs heterostructures -: art. no. 102107
    Dong, XY
    Adelmann, C
    Xie, JQ
    Palmstrom, CJ
    Lou, X
    Strand, J
    Crowell, PA
    Barnes, JP
    Petford-Long, AK
    APPLIED PHYSICS LETTERS, 2005, 86 (10) : 1 - 3
  • [10] MAGNETIC-FIELD-INDUCED METAL-NONMETAL TRANSITION IN GAAS-GA1-XALXAS HETEROSTRUCTURES
    ROBERT, JL
    RAYMOND, A
    KONCZEWICZ, L
    BOUSQUET, C
    ZAWADZKI, W
    ALEXANDRE, F
    MASSON, IM
    ANDRE, JP
    FRIJLINK, PM
    PHYSICAL REVIEW B, 1986, 33 (08): : 5935 - 5938