Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN films

被引：1
|
作者：
Wang, H. [1 ]
Wang, L. L. [1 ]
Sun, X. [1 ]
Zhu, J. H. [1 ]
Liu, W. B. [1 ]
Jiang, D. S. [1 ]
Zhu, J. J. [1 ]
Zhao, D. G. [1 ]
Liu, Z. S. [1 ]
Wang, Y. T. [1 ]
Zhang, S. M. [1 ]
Yang, H. [2 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2009年 / 24卷 / 07期
关键词：
ELECTRON-TRANSPORT; PHASE EPITAXY; BAND-GAP;
D O I：
10.1088/0268-1242/24/7/075004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, the influences of CCl4 on the metalorganic chemical vapor deposition (MOCVD) growth of InN were studied for the first time. It was found that the addition of CCl4 can effectively suppress the formation of metal indium (In) droplets during InN growth, which was ascribed to the etching effect of Cl to In. However, with increasing of CCl4 flow, the InN growth rate decreased but the lateral growth of InN islands was enhanced. This provides a possibility of promoting islands coalescence toward a smooth surface of the InN film by MOCVD. The influence of addition of CCl4 on the electrical properties was also investigated.
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页数：4
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