Processing of blue boron nitride thin films with a solid-gas reaction

被引:7
|
作者
Mokhtari, M
Park, HS
Roesky, HW
Johnson, SE
Bolse, W
Conrad, J
Plass, W
机构
[1] UNIV GOTTINGEN, INST ANORGAN CHEM, D-37077 GOTTINGEN, GERMANY
[2] UNIV IOWA, DEPT CHEM, IOWA CITY, IA 52242 USA
[3] UNIV GOTTINGEN, INST PHYS 2, D-37073 GOTTINGEN, GERMANY
[4] UNIV BIELEFELD, FAK CHEM, D-33501 BIELEFELD, GERMANY
关键词
borazine; boron nitride; materials science; thin films; titanium complexes;
D O I
10.1002/chem.19960021014
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
For the first time, solid-gas reaction techniques have been used for the synthesis and processing of thin films of boron nitride. Clear to intensely colored blue BN films were grown on Si(100) substrates by the transformation of borazine (B3N3H6) with a titanium complex as initiator under flowing nitrogen gas. The thickness of the films ranged from 70 to 100 nm, as determined by Rutherford backscattering (RES) and atomic force microscopy (AFM) analyses. The intensity of the blue color of the thin film can be correlated to its thickness. The composition of the film determined by RES studies corresponds to the stoichiometric formula B0.49N0.45O0.06, and N/B and O/B ratios are found to be 0.92 and 0.12, respectively, Nitrogen contents determined by nuclear reaction analysis agree well with the RES results, Moreover, Auger electron spectroscopy (AES) measurements show that no titanium is present in the films and confirm the composition determined by RES studies. X-ray photoelectron spectroscopy (XPS) shows the presence of boron and nitrogen in the blue BN film, Electron spin resonance (ESR) experiments at 293 and 12 K indicate a single broad signal with a g value (g = 2.005) close to that of a free electron. This synthetic approach provides opportunities for the preparation of new thin-film materials and for the fundamental study of solid-gas reactions.
引用
收藏
页码:1269 / 1274
页数:6
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