Formation of Nanosized Oxide Films via Thermal Oxidation of Co3O4/InP Heterostructures

被引：1
|
作者：
Tomina, E. V. [1 ]
Mittova, I. Ya. [1 ]
Samsonov, A. A. [1 ]
Sladkopevtsev, B. V. [1 ]
Zelenina, L. S. [1 ]
Baranova, V. A. [1 ]
机构：
[1] Voronezh State Univ, Univ pl 1, Voronezh 394018, Russia
来源：
RUSSIAN JOURNAL OF GENERAL CHEMISTRY | 2017年 / 87卷 / 01期
基金：
俄罗斯基础研究基金会;
关键词：
indium phosphide; cobalt(II; III); oxide; thermal oxidation; nanosized oxide film; INP STRUCTURES; SURFACE; GAAS;
D O I：
10.1134/S1070363217010029
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Modification of InP film with magnetron-deposited 30 nm nanolayer of Co3O4 has resulted in the transit mechanism of thermal oxidation of the semiconductor and formation of nanosized oxide-phosphate films. Efficient transit interactions of Co3O4 with the semiconductor due to fast chemical binding of indium has led to the suppression of its diffusion inside the films. Secondary interactions of the oxides result in the formation of phosphate scaffold in the inner film regions, whereas the surface layer contains cobalt and indium oxides.
引用
收藏
页码：8 / 12
页数：5
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