Modeling of high power semiconductor lasers

被引：0
|
作者：
Sujecki, Slawornir [1 ]
机构：
[1] Univ Nottingham, Nottingham NG7 2RD, England
来源：
ICTON 2006: 8th International Conference on Transparent Optical Networks, Vol 1, Proceedings: ICTON, MPM, INDUSTRIAL, PICAW, GOWN | 2006年
关键词：
edge emitting high power laser diodes; travelling wave laser diode models;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Steady state high power laser diode models provide a powerful design tool for laser diode manufacturers. The algorithms currently used for steady state analysis of HPLDs are based on the fixed point method. There are in fact two main algorithms used for this purpose, i.e. coupled solution method (CSM) and separate solution method (SSM). In the paper lower dimensional models are used to study numerical properties of both SSM and CSM and the application of both algorithms to the analysis of high power semiconductor lasers is discussed. The shortcomings of both CSM and SSM are identified and their origin analysed and explained. More efficient and stable algorithms, which allow surpassing the limitations of standard CSM and SSM approach, are provided.
引用
收藏
页码：175 / 178
页数：4
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