Threshold voltage behavior of body-tied FinFET (OMEGA MOSFET) with respect to ion implantation conditions

The body-tied finFET (called OMEGA Omega) metal oxide semiconductor field effect transistor (MOSFET)) exhibits positive characteristics as a future complementary metal oxide semiconductor (CMOS) device. The Omega MOSFETs have unique features such as high heat dissipation to the Si substrate, no floating body effect, and low defect density, while having the key advantages of the silicon-on-insulator (SOI)-based finFET characteristics. In order to increase the threshold voltages on both the Omega NMOSFET and the Omega PMOSFET while keeping the conventional gate electrodes (n(+) polysilicon and p+ polysilicon gates for NMOSFET and PMOSFET, respectively), the device characteristics of the Omega MOSFETs have been characterized with halo ion implantation doses for the Omega NMOSFET and lightly doped drain (LDD) doses for the Omega PMOSFET. It was shown that the V-TH adjustment could be partially achieved.