Formation of Large-Grain Ge(111) Films on Insulator by Gold-Induced Layer-Exchange Crystallization at Low Temperature

被引：0

作者：

Park, Jong-Hyeok ^{[1
]}

Suzuki, Tsuneharu ^{[1
]}

Kurosawa, Masashi ^{[1
]}

Miyao, Masanobu ^{[1
]}

Sadoh, Taizoh ^{[1
]}

机构：

[1] Kyushu Univ, Dept Elect, Nishi Ku, Fukuoka 8190395, Japan

来源：

SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES | 2012年 / 50卷 / 09期

关键词：

ALUMINUM-INDUCED CRYSTALLIZATION; AMORPHOUS-SILICON; SI; GLASS; INTERFACE;

D O I：

10.1149/05009.0475ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A formation technique of orientation-controlled large-grain (< 10 mu m) Ge crystals on insulator at low temperature (<= 350 degrees C) has been investigated to realize advanced flexible electronics. Previously, we proposed a gold-induced crystallization technique, and demonstrated low temperature crystallization (250 degrees C) of Ge on insulator. In the present study, we intentionally inserted thin Al2O3 layers between gold and a-Ge layer, to control crystal nucleation. Consequently, (111)-oriented large-grain (< 20 mu m) Ge crystals are obtained at 350 degrees C by optimizing interfacial oxide layer thickness. It is speculated that this phenomena is attributed to suppression of random bulk nucleation of Ge in Au films and resultant dominance of interfacial nucleation at Ge/SiO2 interfaces.

引用

页码：475 / 480

页数：6

共 50 条

[1] (111)-Oriented Large-Grain Ge on Insulator by Gold-Induced Crystallization Combined with Interfacial Layer Insertion
Park, Jong-Hyeok
Suzuki, Tsuneharu
Kurosawa, Masashi
Miyao, Masanobu
Sadoh, Taizoh
2012 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS, 2012, : 231 - 234
[2] (111)-oriented large-grain (≥50 μm) Ge crystals directly formed on flexible plastic substrate by gold-induced layer-exchange crystallization
Park, Jong-Hyeok
Miyao, Masanobu
Sadoh, Taizoh
JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (02)
[3] Low-Temperature Formation of Large-Grain (≥10 μm) Ge at Controlled-Position on Insulator by Gold-Induced Crystallization Combined with Diffusion-Barrier Patterning
Aoki, Rikuta
Park, Jong-Hyeok
Miyao, Masanobu
Sadoh, Taizoh
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2016, 5 (03) : P179 - P182
[4] Low-temperature (≤300°C) formation of orientation-controlled large-grain (≥ 10 μm) Ge-rich SiGe on insulator by gold-induced crystallization
Sadoh, T.
Park, J. -H.
Aoki, R.
Miyao, M.
THIN SOLID FILMS, 2016, 602 : 3 - 6
[5] Low-Temperature (∼250°C) Gold-Induced Lateral Growth of Sn-Doped Ge on Insulator Enhanced by Layer-Exchange Reaction
Sadoh, Taizoh
Sakai, Takatsugu
Matsumura, Ryo
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2019, 8 (10) : P609 - P614
[6] Low-temperature (≤250°C) crystallization of Si on insulating substrate by gold-induced layer-exchange technique
Park, Jong-Hyeok
Kurosawa, Masashi
Kawabata, Naoyuki
Miyao, Masanobu
Sadoh, Taizoh
TENCON 2010: 2010 IEEE REGION 10 CONFERENCE, 2010, : 2196 - 2198
[7] Layer-exchange crystallization for low-temperature (∼450°C) formation of n-type tensile-strained Ge on insulator
Gao, Hongmiao
Sadoh, Taizoh
APPLIED PHYSICS LETTERS, 2020, 117 (17)
[8] Effect of gold layer thickness on the low-temperature crystallization process of germanium thin films by gold-induced crystallization
Sunthornpan, Narin
Tauchi, Kohtaroh
Tezuka, Nairu
Kyuno, Kentaro
JAPANESE JOURNAL OF APPLIED PHYSICS, 2020, 59 (08)
[9] Large-Grain Sn-Doped Ge (100) on Insulator by Aluminum-Induced Crystallization at Low-Temperature for Flexible Electronics
Sasaki, Masaya
Miyao, Masanobu
Sadoh, Taizoh
2016 23RD INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD), 2016, : 191 - 193
[10] Au-Induced Low-Temperature (∼250°C) Crystallization of Si on Insulator Through Layer-Exchange Process
Park, Jong-Hyeok
Kurosawa, Masashi
Kawabata, Naoyuki
Miyao, Masanobu
Sadoh, Taizoh
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (06) : H232 - H234

← 1 2 3 4 5 →