Parasitic Elements Extraction of AlGaN/GaN HEMTs on SiC Substrate Using Only Pinch-off S-parameter Measurements

被引：0

作者：

Jarndal, Anwar H. ^{[1
]}

机构：

[1] Univ Sharjah, Elect & Comp Engn Dept, Sharjah 27272, U Arab Emirates

来源：

2014 26TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS (ICM) | 2014年

关键词：

GaN HEMT; semiconductor device modeling; computer aided analysis; parameter extraction; DEVICES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a parameter extraction method for GaN HEMTs is developed. The main advantage of this approach is its accuracy, reliability and dependence on only pinch-off Sparameter measurements to extract the parasitic elements of the device. The extraction results are compared with other extraction results based on pinch-off and forward measurements. The comparison result demonstrates the validity of the proposed method for small-and large-signal modeling of GaN devices.

引用

页码：13 / 16

页数：4

共 24 条

[1] Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy
Martina Baeumler
Frank Gütle
Vladimir Polyakov
Markus Cäsar
Michael Dammann
Helmer Konstanzer
Wilfried Pletschen
Wolfgang Bronner
Rüdiger Quay
Patrick Waltereit
Michael Mikulla
Oliver Ambacher
Franck Bourgeois
Reza Behtash
Klaus J. Riepe
Paul J. van der Wel
Jos Klappe
Thomas Rödle
Journal of Electronic Materials, 2010, 39 : 756 - 760
[2] Investigation of Leakage Current of AlGaN/GaN HEMTs Under Pinch-Off Condition by Electroluminescence Microscopy
Baeumler, Martina
Guetle, Frank
Polyakov, Vladimir
Caesar, Markus
Dammann, Michael
Konstanzer, Helmer
Pletschen, Wilfried
Bronner, Wolfgang
Quay, Ruediger
Waltereit, Patrick
Mikulla, Michael
Ambacher, Oliver
Bourgeois, Franck
Behtash, Reza
Riepe, Klaus J.
van der Wel, Paul J.
Klappe, Jos
Rodle, Thomas
JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (06) : 756 - 760
[3] Hybrid Extraction Method Based on Pinch-off S-parameters for mm-Wave Modeling of GaN HEMTs
Jarndal, Anwar
2016 IEEE 59TH INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS AND SYSTEMS (MWSCAS), 2016, : 301 - 304
[4] Substrate removal of AlGaN/GaN HEMTs using laser lift-off
Das, J
Ruythooren, W
Vandersmissen, R
Derluyn, J
Germain, M
Borghs, G
Physica Status Solidi C - Conferences and Critical Reviews, Vol 2, No 7, 2005, 2 (07): : 2655 - 2658
[5] Cubic GaN/AlGaN HEMTs on 3C-SiC substrate for normally-off operation
Abe, Masayuki
Nagasawa, Hiroyuki
Pottrast, Stefan
Fernandez, Jara
Schroemann, Jorg
As, Donat Josef
Lischka, Klaus
IEICE TRANSACTIONS ON ELECTRONICS, 2006, E89C (07): : 1057 - 1063
[6] SiC Diode Characterization using Pulsed S-Parameter Measurements
Hergt, Martin
Mayer, Lukas W.
Sack, Martin
Nielebock, Sebastian
Hiller, Marc
2019 21ST EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE '19 ECCE EUROPE), 2019,
[7] A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements
Luo, Peng
Schnieder, Frank
Bengtsson, Olof
Vadala, Valeria
Raffo, Antonio
Heinrich, Wolfgang
Rudolph, Matthias
INTERNATIONAL JOURNAL OF MICROWAVE AND WIRELESS TECHNOLOGIES, 2019, 11 (02) : 121 - 129
[8] Parasitic Inductances Extraction for SiC Power Modules Using An Enhanced Two-Port S-Parameter Approach
Wang, Zhongjing
Yuan, Zhao
Zhao, Yue
2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), 2021, : 2420 - 2426
[9] S-parameter broadband measurements of microstrip lines and extraction of the substrate intrinsic properties
Hinojosa, J
Faucon, L
Queffelec, P
Huret, F
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2001, 30 (01) : 65 - 69
[10] Thermal Analysis of AlN/GaN/AlGaN HEMTs grown on Si and SiC Substrate through TCAD Simulations and Measurements
Sahoo, A. K.
Subramani, N. K.
Nallatamby, J-C.
Sommet, R.
Quere, R.
Rolland, N.
Medjdoub, F.
2016 11TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2016, : 149 - 152

← 1 2 3 →