Arsenic diffusion in Si and Si0.9Ge0.1 alloys:: Effect of defect injection

被引：0
|
作者：
Uppal, S [1 ]
Bonar, JM [1 ]
Zhang, J [1 ]
Willoughby, AFW [1 ]
机构：
[1] Univ Southampton, Mat Res Grp, Sch Engn Sci, Southampton SO17 1BJ, Hants, England
来源：
HIGH-MOBILITY GROUP-IV MATERIALS AND DEVICES | 2004年 / 809卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Results of intrinsic As diffusion in Si as well as in strained and relaxed Si0.9Ge0.1 layers are presented. Using Molecular Beam Epitaxy in-situ As doped epitaxial Si and compressively strained and relaxed Si-Ge layers were grown on Si substrates. The samples were annealed using Rapid Thermal Annealing (RTA) at 1000degreesC. Arsenic diffusion is seen to be enhanced in SiGe than in Si. The enhancement factor is calculated to be 2.3 and 1.3 for relaxed and strained Si0.9Ge0.1, respectively. Also, using RTA in oxygen atmosphere, interstitial and vacancies were selectively injected in to the sample structures. Diffusion enhancement is also recorded in Si and Si-Ge structures with interstitial as well as vacancy injections over inert anneal. The results suggest that both interstitial and vacancy defects contribute to As diffusion in Si and Si0.9Ge0.1.
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页码：261 / 266
页数：6
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