Effect of bottom electrodes on microstructures and electrical properties of sol-gel derived Pb(Zr0.53Ti0.47)O3 thin films

被引:43
|
作者
Wang, ZJ [1 ]
Chu, JR
Maeda, R
Kokawa, H
机构
[1] Tohoku Univ, Grad Sch Engn, Dept Mat Proc, Sendai, Miyagi, Japan
[2] Univ Sci & Technol China, Dept Precis Machinery & Instrumentat, Hefei 230026, Peoples R China
[3] Natl Inst Adv Sci & Technol, Tsukuba, Ibaraki, Japan
关键词
crystallization; electron microscopy; interface; ferroelectric properties;
D O I
10.1016/S0040-6090(02)00723-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Lead zirconate titanate (PZT) thin films were fabricated by adding 15 mol.% excess of Pb to the starting solution and spin coating onto Pt/Ti/SiO2/Si and Ir/IrO2/SiO2/Si substrates. The effect of bottom electrodes on the microstructures, crystalline phases and electrical properties of the PZT thin films was investigated. It was found that the films deposited on Pt/Ti bottom electrode consisted of perovskite phase without pyrochlore phase, whereas the films deposited on the Ir/IrO2 bottom electrode consisted of mainly perovskite phase with a small amount of pyrochlore phase. Bottom electrodes were also found to influence the preferred orientation and microstructure as well as the surface morphology of the PZT films. The Pt/Ti bottom electrode favored a (100) orientation and fine-grained structure as well as a smooth surface, whereas the Ir/IrO2 bottom electrode favored a random orientation, non-uniform structure and rough surface. High-resolution electron microscopy observation reveals that there is an intermediate layer of IrO2 at the PZT/Ir interface. This indicates that the intermediate layer of IrO2 influenced the orientation and microstructure of the PZT films on the Ir/IrO2, bottom electrode. Ferroelectricity was investigated by observing the polarization hysteresis loops, The remanent polarization and saturation polarization of the PZT films on the Ir/hO(2) bottom electrode were smaller than those of the PZT films on the Pt/Ti bottom electrode. The difference between the dielectric and the ferroelectric properties in these PZT films was correlated to their crystalline phases and microstructure. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:66 / 71
页数:6
相关论文
共 50 条
  • [1] Effect of bottom electrodes on microstructures and electrical properties of sol gel derived Pb(Zr0.53 Ti0.47)O3 thin film
    Wang, ZJ
    Chu, JR
    Maeda, R
    MICRO MATERIALS, PROCEEDINGS, 2000, : 381 - 384
  • [2] Investigation on the electrical characteristics of sol-gel derived Pb1.05(Zr0.53Ti0.47)O3 thin films
    Majumder, SB
    Bhaskar, S
    Dobal, PS
    Katiyar, RS
    INTEGRATED FERROELECTRICS, 2000, 29 (1-2) : A87 - A98
  • [3] Sol-gel derived Pb(Zr0.53Ti0.47)O3 thin films on BaPbO3 electrode
    Liang, CS
    Wu, JM
    INTEGRATED FERROELECTRICS, 2004, 64 : 191 - 200
  • [4] Depolarization characteristics of sol-gel Pb1.05(Zr0.53Ti0.47)O3 thin films
    Ramesh, V
    Mohapatra, YN
    Agrawal, DC
    FERROELECTRICS, 2004, 306 : 71 - 77
  • [5] Stacking effects on dielectric properties of sol-gel derived Pb(Zr0.53Ti0.47)O3/PbTiO3 thin films
    Yoon, KH
    Shin, JH
    Park, JH
    Kang, DH
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (07) : 3626 - 3629
  • [6] Microstructure and electrical properties of sol-gel derived Pb(Zr0.53Ti0.47)O3/MgO nanoparticles and composite ceramics
    Dong, M
    Ye, ZG
    FERROELECTRICS, 2001, 262 (1-4) : 1187 - 1192
  • [7] Electrical properties of Pb(Zr0.53Ti0.47)O3 [PZT] fibers fabricated by sol-gel technique
    Park, YI
    Miyayama, M
    ELECTROCERAMICS IN JAPAN I, 1999, 157-1 : 33 - 39
  • [8] Preparation and Properties of Pb1-xSrx (Zr0.53Ti0.47) O3 Thin Films by Sol-Gel Method
    Cui, Yan
    Zhao, Jiaxin
    Zhang, Lvquan
    Xia, Jinsong
    Dong, Weijie
    Wang, Liding
    FERROELECTRICS, 2010, 405 : 255 - 261
  • [9] Investigation on the dielectric and polarization behavior of sol-gel derived erbium doped Pb(Zr0.53Ti0.47)O3 thin films
    Roy, B
    Majumder, SB
    Katiyar, RS
    INTEGRATED FERROELECTRICS, 2002, 42 : 373 - 384
  • [10] Growth and properties of Pb(Zr0.53Ti0.47)O3 thin films
    Blanco, O
    Martínez, E
    Heiras, J
    Siqueiros, J
    Castellanos-Guzmán, AG
    MICROELECTRONICS JOURNAL, 2005, 36 (3-6) : 543 - 545