Partial Discharge Behaviors in Power Modules Under Square Pulses With Ultrafast dv/dt

被引:56
|
作者
You, Haoyang [1 ]
Wei, Zhuo [1 ]
Hu, Boxue [1 ]
Zhao, Zheng [1 ]
Na, Risha [1 ]
Wang, Jin [1 ]
机构
[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA
基金
美国国家航空航天局;
关键词
Partial discharges; Multichip modules; Delay effects; Copper; Generators; Switches; Cavity resonators; DBC design; partial discharge; power module; repetitive pulses; single pulse; ultrafast dv; dt; SILICONE GEL; INCEPTION; INSULATION;
D O I
10.1109/TPEL.2020.3014043
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The unprecedented high-speed switching of wide bandgap power devices may change the partial discharge (PD) behaviors of power modules, busbars, and loads. However, very little research has been published on PD behaviors under square-wave pulses with ultrafast dv/dt. To address this problem, this article studies the PD behaviors of direct bonded copper samples with different trench distances and chamfer radii under single and repetitive square pulseswith ultrafast dv/dt. The results showthat for the single-pulse excitation partial discharge inception voltage (PDIV) decreases with increasing rise time if the pulsewidth is shorter than 300 mu s, and PDIV decreaseswith increasing pulsewidth. For repetitive pulse excitation, PDIV increases linearlywith trench distance if the chamfer radius is larger than 0.5 mm, while it follows a concave curve if the chamfer radius is less than 0.5 mm. On the other hand, for a fixed trench distance, the PDIV changes quadratically with the chamfer radius increasing from0 (right angle) to 0.7 mm. Based on the experimental results, a PDmodel with bubble expansion theory is to explain the PDmechanism under ultrafast dv/dt excitation, and an empirical equation for PDIV prediction is also derived.
引用
收藏
页码:2611 / 2620
页数:10
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