Crystallinity and thickness control of well-ordered ultra-thin Al2O3 film on NiAl(110)

被引：27
|
作者：
Yoshitake, M [1 ]
Mebarki, B [1 ]
Lay, TT [1 ]
机构：
[1] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050003, Japan
来源：
SURFACE SCIENCE | 2002年 / 511卷 / 1-3期
关键词：
aluminum oxide; insulating films; epitaxy; crystallization; low energy electron diffraction (LEED); auger electron spectroscopy;
D O I：
10.1016/S0039-6028(02)01567-4
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Epitaxial film of well-ordered ultra-thin (0.5 nm) Al2O3 is known to grow on NiAl(1 1 0) by 1200 L oxygen introduction. We found that the crystallinity of the epitaxial film was improved by introducing 1200 L oxygen at lower pressure. Control of the thickness of the epitaxial Al2O3 film was also achieved, by multiple-oxidation, for the first time. Successful thickness control of epitaxial Al2O3 film in the range of 0.5-1.4 nm is considered an important step toward a tunneling electron emitter device, as well as basic research for model catalysts. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：L313 / L318
页数：6
相关论文
共 50 条
  • [1] Well-ordered ultra-thin Al2O3 film formation on NiAl(110) by high-temperature oxidation
    Yoshitake, M
    Lay, TT
    Song, WJ
    SURFACE SCIENCE, 2004, 564 (1-3) : 211 - 217
  • [2] Temperature effect on growth of well-ordered thin Al2O3 film on NiAl(110)
    Lay, TT
    Yoshitake, M
    Mebarki, B
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2002, 20 (06): : 2027 - 2031
  • [3] Epitaxial growth of well-ordered ultra-thin Al2O3 film on NiA1 (110) by a single-step oxidation
    Lay, TT
    Yoshitake, M
    Song, W
    APPLIED SURFACE SCIENCE, 2005, 239 (3-4) : 451 - 457
  • [4] Iron oxide thin film growth on Al2O3/NiAl(110)
    Handke, Bartosz
    Simonsen, Jens Baek
    Bech, Martin
    Li, Zheshen
    Moller, Preben Juul
    SURFACE SCIENCE, 2006, 600 (24) : 5123 - 5130
  • [5] Transmission electron microscopic investigation of an ordered Al2O3 film on NiAl(110)
    Klimenkov, M
    Nepijko, S
    Kuhlenbeck, H
    Freund, HJ
    SURFACE SCIENCE, 1997, 385 (01) : 66 - 76
  • [6] γ-Al2O3 thin film formation via oxidation of β-NiAl(110)
    Zhang, Zhongfan
    Li, Long
    Yang, Judith C.
    ACTA MATERIALIA, 2011, 59 (15) : 5905 - 5916
  • [7] Morphology and thickness of ultra-thin epitaxial Al2O3 film on Cu-9%Al(111)
    Yamauchi, Y
    Yoshitake, M
    Song, WJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (7B): : 4721 - 4724
  • [8] Adsorption of an Au atom and dimer on a thin θ-Al2O3/NiAl(100) film: dependence on the thickness of the θ-Al2O3 film
    Hsia, Ching-Lun
    Wang, Jeng-Han
    Luo, Meng-Fan
    RSC ADVANCES, 2018, 8 (05): : 2642 - 2652
  • [9] Interaction of water with ordered Al2O3 ultra thin films grown on NiAl(100).
    Ozensoy, E
    Szanyi, J
    Peden, CHF
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2005, 229 : U731 - U731
  • [10] The Defects of ZnO Nanorods Passivated By Ultra-Thin Al2O3 Film
    Li, Shibin
    Liu, Detao
    Zhang, Peng
    Wang, Yafei
    Sarvari, Hojjatollah
    Xuan, Yaoyu
    Chen, Zhi David
    DIELECTRICS FOR NANOSYSTEMS 7: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 2016, 72 (02): : 275 - 285
12345