Oxygen Adsorption Effect of Amorphous InGaZnO Thin-Film Transistors

被引：17
|
作者：
Zhou, Xiaoliang [1 ]
Shao, Yang [2 ]
Zhang, Letao [2 ]
Xiao, Xiang [2 ]
Han, Dedong [1 ]
Wang, Yi [1 ]
Zhang, Shengdong [1 ,2 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
[2] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518055, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 04期
基金：
美国国家科学基金会;
关键词：
Amorphous oxide semiconductor; thinfilm transistors; oxygen adsorption; surface-state model; OXIDE; ZNO; WATER;
D O I：
10.1109/LED.2017.2666881
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effect of oxygen adsorption at the back channel of a-IGZO thin-film transistors (TFTs) is investigated. It is shown that for TFTs with the channel layer sputter-deposited at a high O-2/Ar flow rate ratio (R-O/Ar), the threshold voltages in vacuum and O-2 ambient do not show any difference; for devices fabricated at a low R-O/Ar, the threshold voltages in vacuum are lower than those in O-2. In addition, the devices in O-2 show a more significant threshold voltage shift than those in vacuum do under a positive gate bias stress. The surface-state model is used to explain this observation. It is inferred that the oxygen adsorptions are physical and chemical, respectively, in the high- and low-R-O/Ar cases, and the transition from physical to chemical adsorption occurs when a positive gate bias stress is applied.
引用
收藏
页码：465 / 468
页数：4
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